The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
FEATURES of 2N60 POWER MOSFET
RDS(ON) = 3.8Ω at VGS = 10V.
Ultra Low gate charge (typical 9.0nC)
Low reverse transfer capacitance (Crss = typical 5.0 pF)