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APT8030JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
- Stock: Out Of Stock NotInStock
- SKU: 7361 | DAG003
-
Rs.
1,593.00 (inc GST)
Rs.1,350.00 + GSTQty :
GST Invoice on all Purchase. So you will be eligible to take input tax credit. |
IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com. |
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APT8030JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
APT8030JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
The APT8030JN is a high-voltage N-channel MOSFET that operates in enhancement mode. It is designed to handle high currents and withstand high voltages, typically used in applications where efficiency, reliability, and performance are crucial. The device is often packaged in TO-220, TO-247, or other similar packages, making it suitable for through-hole PCB designs with adequate heat dissipation capabilities.
DNA solutions, Nashik has various types of N-Channel MOSFET's. Check out our complete collection of N-Channel MOSFET's.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Features of APT8030JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
- High Voltage Capability: Can withstand high drain-source voltages.
- Low On-Resistance (R<sub>DS(on)</sub>): Ensures low conduction losses, improving efficiency.
- Fast Switching Speed: Reduces switching losses and improves overall system efficiency.
- Avalanche Energy Rated: Provides ruggedness in high-energy switching environments.
- High Current Capability: Designed to handle high drain currents.
- Low Gate Charge: Simplifies gate drive design and reduces gate drive losses.
Specifications of APT8030JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
- Drain-Source Voltage (V<sub>DSS</sub>): Typically up to 800V.
- Continuous Drain Current (I<sub>D</sub>): Approximately 30A (depending on package and cooling conditions).
- On-Resistance (R<sub>DS(on)</sub>): Typically in the range of 0.3 to 0.4 ohms (depending on the operating conditions).
- Gate Threshold Voltage (V<sub>GS(th)</sub>): Approximately 2.0 to 4.0V.
- Total Gate Charge (Q<sub>g</sub>): Typically around 100 NC (nanocoulombs).
Package Includes
- 1 x APT8030JN N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET
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