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APT8030JN N-Channel High Voltage Power MOSFET


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  • Stock: Out Of Stock

    Availability: NotInStock priceValidUntil: 2026-10-09

  • SKU: 7361 | DAG003

Availability: NotInStock priceValidUntil: 2026-10-09

  • Rs. 1,593.00 (inc GST)
    Rs.1,350.00 + GST

    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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APT8030JN N-Channel High Voltage Power MOSFET

APT8030JN N-Channel MOSFET designed for high voltage applications with low on-resistance and fast switching speed.

The APT8030JN N-Channel High Voltage Power MOSFET is engineered for high-voltage applications. This device handles up to 800V and continuous currents around 30A, ensuring reliability. Its low on-resistance minimizes conduction losses, enhancing overall efficiency. The fast switching speed reduces switching losses, making it ideal for power management in various electronic designs.

The APT8030JN is perfect for applications requiring ruggedness in high-energy environments. With a low gate charge, it simplifies gate drive design, making it suitable for both hobbyists and professionals. This MOSFET is often used in power supplies, motor drivers, and other high-performance circuits.

In the Indian market, the APT8030JN N-Channel MOSFET stands out for its combination of efficiency and high-voltage capability. Whether you are designing a new circuit or upgrading an existing one, this component delivers performance you can trust. Explore our range of N-Channel MOSFETs for more options.

Explore the reliability of the APT8030JN N-Channel MOSFET at DNA. We offer a wide selection of MOSFET & IGBT components. Check other MOSFET & IGBT that we have in stock.

If you are looking for specific electronic components, DNA can assist you. We can import items not in stock and support retail as well as bulk purchases. Check our related items like Sensor Module, Capacitor, and Digital IC. Contact Us

Features of APT8030JN N-Channel High Voltage Power MOSFET

  • High Voltage Capability
  • Low On-Resistance
  • Fast Switching Speed
  • Avalanche Energy Rated
  • High Current Capability
  • Low Gate Charge

Specifications of APT8030JN N-Channel High Voltage Power MOSFET

  • Drain-Source Voltage (V DSS): Up to 800V
  • Continuous Drain Current (I D): Approximately 30A
  • On-Resistance (R DS(on)): 0.3 to 0.4 ohms
  • Gate Threshold Voltage (V GS(th)): 2.0 to 4.0V
  • Total Gate Charge (Q g): Around 100 nC

Applications of APT8030JN N-Channel High Voltage Power MOSFET

  • Power Supplies
  • Motor Drivers
  • High-Performance Circuits
  • Power Management Systems

Related Links for APT8030JN N-Channel High Voltage Power MOSFET

Package Includes

  • 1 X APT8030JN N-Channel High Voltage Power MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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