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  • IRF510 N-Channel Power MOSFET

Product Images are shown for illustrative purposes only and may differ from actual product.

IRF510 N-Channel Power MOSFET

  • Stock: 1
  • SKU: 0538 | DAA167
  • Rs. 38.94 (inc GST)
    Rs.33.00 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

IRF510 N Channel Power MOSFET

IRF510 N Channel 100 volts, 5.6 Ampere Power MOSFET in TO220 Package

IRF510 Power MOSFET is a third generation MOSFET that provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness. 

IRF510 N Channel Power MOSFET comes in TO220 package. The TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 Watt. The low thermal resistanceand low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT

If you are in Nasik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRF510 Power MOSFET

  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • 175 °C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements

Ratings of IRF510 N-Channel Power MOSFET

  • Drain-Source Voltage (VDS): 100 Volts
  • Gate-Source Voltage (VGS): ± 20 Volts
  • Continuous Drain Current (VGS at 10 V TC = 25 °C): 5.6 Ampere
  • Continuous Drain Current (VGS at 10 V TC = 100 °C): 4.0 Ampere
  • Pulsed Drain Current (IDM): 20 Ampere
  • Maximum Power Dissipation TC = 43 Watt
  • Peak Diode Recovery dV/dt c dV/dt 5.5 V/ns
  • Operating Junction and Storage Temperature Range: -55 to +175 

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