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IRFP2907 N-Channel Power MOSFET
- Stock: 12
- SKU: 637 | DAA171
-
Rs. 429.52 (inc GST)
Rs.364.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
IRFP2907 N Channel Power MOSFET for Automotive Applications
IRFP2907 N-Channel MOSFET for automotive use with low on-resistance, fast switching, and 175°C operating temperature.
The IRFP2907 N Channel Power MOSFET for Automotive Applications is designed for efficiency in automotive systems. This MOSFET features low on-resistance and fast switching capabilities, ensuring optimal power management. With a maximum operating temperature of 175°C, it supports high power dissipation, making it ideal for various automotive electrical systems.
Engineered using advanced process technology, the IRFP2907 offers a dynamic dv/dt rating and allows for repetitive avalanche, enhancing its durability in demanding conditions. It is suitable for applications like integrated starter alternators and 42 volts automotive systems, ensuring reliability and safety.
Choose the IRFP2907 N Channel Power MOSFET for your automotive projects and experience dependable performance in high-temperature applications. For a broad selection of MOSFET & IGBT products, explore our offerings today.
Explore high-quality MOSFET & IGBT products at DNA. The IRFP2907 from a trusted Manufacturer delivers reliable performance. Check other MOSFET & IGBT that we have in stock.
Are you searching for specific electronic components? DNA can help you find IGBTs, microcontrollers, Nextion displays, SMPS, and sensor modules. We can also import parts if needed. Contact Us.
Features of IRFP2907 N Channel Power MOSFET
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Power Dissipation of 470 W
- Linear Derating Factor of 3.1 W/°C
- Gate-to-Source Voltage ± 20 V
Specification of IRFP2907 N Channel Power MOSFET
- Maximum Voltage: 75 V
- Power Dissipation: 470 W
- Operating Temperature: 175°C
- On-Resistance: Low
- Gate-to-Source Voltage: ± 20 V
Applications of IRFP2907 N Channel Power MOSFET
- Integrated Starter Alternator
- 42 Volts Automotive Electrical Systems
- Power Management in Vehicles
- High-Temperature Automotive Applications
Related Links for IRFP2907 N Channel Power MOSFET for Automotive Applications
- IRFP2907 N Channel Power MOSFET Datasheet: [insert_datasheet_link]
Package Includes
- 1 X IRFP2907 N Channel Power MOSFET
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