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SI2336DS T1 GE3 SMD MOSFET
- Stock: 30
- SKU: 3721 | DAF105
-
Rs. 31.86 (inc GST)
Rs.27.00 + GSTQty :
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SI2336DS T1 GE3 SMD MOSFET
SI2336DS T1 GE3 SMD MOSFET
This is N-channel 30V (D-S) TrenchFET® power MOSFET. Used in DC/DC converters, boost converters.
DNA solutions, Nashik has various types of Power MOSFET's. Check out our complete collection of Power MOSFET's.
If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India. |
Features of SI2336DS T1 GE3 SMD MOSFET
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- Material categorization:
- For definitions of compliance please see
Applications
- Boost Converters
- DC/DC Converters
Specifications
- Product Category: MOSFET
- RoHS :Details
- Technology: Si
- Vds - Drain-Source Breakdown Voltage:30 V
- Id - Continuous Drain Current:5.2 A
- Rds On - Drain-Source Resistance:42 mOhms
- Mounting Style:SMD/SMT
- Package/Case:SOT-23-3
- Transistor Polarity: N-Channel
- Number of Channels:1 Channel
- Vgs - Gate-Source Voltage: - 8 V, + 8 V
- Vgs th - Gate-Source Threshold Voltage:1 V
- Qg - Gate Charge:10 nC
- Minimum Operating Temperature: - 55 C
- Maximum Operating Temperature: + 150 C
- Pd - Power Dissipation:1.8 W
- Channel Mode:Enhancement
- Tradename: TrenchFET
- Series:SI2
- Packaging: Reel
- Packaging :Cut Tape
- Packaging: Mouse Reel
- Configuration: Single
- Fall Time:10 ns
- Height:1.45 mm
- Length:2.9 mm
- Product Type: MOSFET
- Rise Time:10 ns
- Subcategory: MOSFETs
- Transistor Type:1 N-Channel
- Typical Turn-Off Delay Time:20 ns
- Typical Turn-On Delay Time:6 ns
- Width:1.6 mm
- Part # Aliases:SI2336DS-T1-BE3 SI2336DS-GE3
- Unit Weight:8 mg
Package Includes
1 x SI2336DS T1 GE3 SMD MOSFET
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