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SI2336DS T1 GE3 SMD MOSFET
- Stock: 30
- SKU: 3721 | DAF105
-
Rs. 31.86 (inc GST)
Rs.27.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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SI2336DS T1 GE3 SMD Power MOSFET
SI2336DS T1 GE3 is a 30V N-channel MOSFET ideal for DC/DC converters with low Rds On of 42 mOhms and 5.2 A continuous drain current.
The SI2336DS T1 GE3 SMD Power MOSFET is a reliable N-channel device designed for efficient power management. With a breakdown voltage of 30V and a low on-resistance of 42 mOhms, this MOSFET operates effectively in DC/DC converters and boost converters. Its compact SOT-23-3 package allows for easy integration into various electronic circuits.
Engineered with TrenchFET technology, the SI2336DS T1 GE3 ensures fast switching with a typical turn-on delay time of just 6 ns and a turn-off delay time of 20 ns. This feature enhances performance in high-speed applications, making it a suitable choice for modern electronic designs. The device supports a wide temperature range, ensuring reliability in diverse operating conditions.
This MOSFET is ideal for applications that require efficient power conversion and management. Whether you're designing a new circuit or upgrading existing systems, the SI2336DS T1 GE3 SMD Power MOSFET stands out as a dependable component in the MOSFET & IGBT category.
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Features of SI2336DS T1 GE3 SMD Power MOSFET
- N-Channel
- 30V Drain-Source Voltage
- Low On-Resistance of 42 mOhms
- Fast Switching Times
- SOT-23-3 Package
Specification of SI2336DS T1 GE3 SMD Power MOSFET
- Vds: 30 V
- Id: 5.2 A
- Rds On: 42 mOhms
- Vgs: -8 V to +8 V
- Max Temp: +150 C
- Power Dissipation: 1.8 W
Applications of SI2336DS T1 GE3 SMD Power MOSFET
- DC/DC Converters
- Boost Converters
- Power Management Circuits
- High-Speed Switching Applications
Package Includes
- 1 X SI2336DS T1 GE3 SMD Power MOSFET
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