UTC 4N60L High Voltage Power MOSFET
- Stock: Out Of Stock
- SKU: 8239 | DAH862
-
Rs. 82.60 (inc GST)
Rs.70.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
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UTC 4N60L High Voltage Power MOSFET
UTC 4N60L MOSFET handles 600V, 4A with low on-resistance and fast switching.
The UTC 4N60L High Voltage Power MOSFET is an N-channel enhancement-mode device ideal for high voltage applications up to 600V. It supports moderate current loads of 4A, making it suitable for switching power supplies and LED lighting systems. Its low on-resistance improves efficiency and reduces heat dissipation, ensuring reliable performance.
Constructed with advanced planar stripe technology, the UTC 4N60L High Voltage Power MOSFET features fast switching capability, minimizing power loss during operation. This rugged design can withstand avalanche energy, making it a dependable choice for motor drives and inverter circuits. Its robust specifications ensure it meets the demands of consumer electronics and industrial systems.
For those looking for efficiency and reliability, the UTC 4N60L High Voltage Power MOSFET stands out. Its compact TO-220 package allows for easy integration into various electronic projects. Explore its applications in switching power supplies and beyond, and experience its outstanding performance.
At DNA, we offer a wide range of high-quality MOSFET & IGBT products from trusted brands. Explore the durability and efficiency of the UTC 4N60L in our MOSFET & IGBT category. Check other "MOSFET & IGBT" that we have in stock.
If you are searching for specific electronic components, reach out to us at DNA. We can help you find parts like Super Capacitors, Nextion Displays, or Development Modules. We also support bulk orders and can import items if necessary. Contact Us.
Features of UTC 4N60L High Voltage Power MOSFET
- High Voltage Handling
- Moderate Current Capacity
- Low On-Resistance
- Fast Switching
- Rugged Design
Specification of UTC 4N60L High Voltage Power MOSFET
- Maximum Drain-Source Voltage (Vds): 600V
- Maximum Gate-Source Voltage (Vgs): ±30V
- Continuous Drain Current (Id): 4A
- Pulsed Drain Current (Id,pulse): 16A
- Maximum Power (Pd): 100W (with proper heatsink)
- Resistance: 2.2 to 2.8Ω
- Package: TO-220
Applications of UTC 4N60L High Voltage Power MOSFET
- Switching Power Supplies
- LED Lighting Systems
- Motor Drives
- Inverter Circuits
- Consumer Electronics
Related Links for UTC 4N60L High Voltage Power MOSFET
Package Includes
- 1 X UTC 4N60L High Voltage Power MOSFET
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