FQD7N60C N-channel enhancement-mode power MOSFET

FQD7N60C N-channel Enhancement-mode Power MOSFET

FQD7N60C MOSFET offers 600V rating, low gate charge, and high efficiency for power applications.

The FQD7N60C N-channel enhancement-mode power MOSFET delivers reliable performance in high-voltage applications. With a voltage rating of 600V, it is ideal for switch mode power supplies, motor drivers, and inverter circuits. Its low on-resistance and low gate charge ensure high efficiency and fast switching, making it a top choice for electronic designers in India. The FQD7N60C MOSFET features a TO-220 package, suitable for through-hole mounting, which simplifies installation in various power systems.

Engineers looking for a durable and efficient solution will find the FQD7N60C N-channel enhancement-mode power MOSFET meets their needs. Its avalanche rating provides added protection, enhancing performance in rugged applications. Whether you are designing lighting ballasts or high voltage inverters, this MOSFET stands out for its reliability and efficiency.

Explore the benefits of the FQD7N60C MOSFET for your power management needs. Its applications span across several sectors, including automotive and industrial electronics. Choose this component for your next project to ensure optimal performance and reliability.

At DNA, we offer a diverse selection of MOSFET & IGBT products from leading brands. Explore the FQD7N60C and enhance your electronic designs. Check other MOSFET & IGBT that we have in stock.

If you need specific electronic components, DNA can assist you. We can import items not currently available and support retail or bulk orders. Explore our range including Development boards, Sensor Modules, HMI Displays, Microcontrollers, SMPS, and Diodes. Contact Us.

Features of FQD7N60C N-channel enhancement-mode power MOSFET

• 600V drain-source voltage rating
• Low gate charge for fast switching
• Low RDS(on) for high efficiency
• TO-220 package for through-hole mounting
• Avalanche rated for rugged performance

Specification of FQD7N60C N-channel enhancement-mode power MOSFET

• Drain-Source Voltage (VDS): 600V
• Continuous Drain Current (ID): 7A
• Gate Threshold Voltage (VGS(th)): 2V - 4V
• RDS(on): 1.3Ω max @ VGS = 10V
• Package Type: TO-220

Applications of FQD7N60C N-channel enhancement-mode power MOSFET

• Switch mode power supplies (SMPS)
• Motor control and drivers
• High voltage inverters
• Lighting ballasts and electronic transformers

Related Links for FQD7N60C N-channel Enhancement-mode Power MOSFET

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X FQD7N60C N-channel enhancement-mode power MOSFET