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IRF3205 N Channel Power MOSFET

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Stock: 20
Availability: InStock priceValidUntil: 2026-03-21
Brand: Infineon Technologies
SKU: 712 | DAA176

Price :
Rs.40.12 Rs. 37.17 (inc GST)

Qty :
Qty Qty

GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

IRF3205 N Channel Power MOSFET

IRF3205 N Channel Power MOSFET - 55 Volts, 110 Ampere in TO-220 Package with 50 watts dissipation

IRF3205 Power MOSFET has low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF3205 N Channel Power MOSFET comes in TO-220 package. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRF3205 Power MOSFET

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
IDM Pulsed Drain Current 390 A
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 62 A
EAR Repetitive Avalanche Energy 20 mJ

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

Package Includes

1 x IRF3205 N Channel Power MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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