IRF3205 N Channel Power MOSFET

IRF3205 N Channel Power MOSFET - 55 Volts, 110 Ampere in TO-220 Package with 50 watts dissipation

IRF3205 Power MOSFET has low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF3205 N Channel Power MOSFET comes in TO-220 package. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. 

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Features of IRF3205 Power MOSFET

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 A
  

• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A

• IDM Pulsed Drain Current 390 A

• PD @TC = 25°C Power Dissipation 200 W

• Linear Derating Factor 1.3 W/°C

• VGS Gate-to-Source Voltage ± 20 V

• IAR Avalanche Current 62 A

• EAR Repetitive Avalanche Energy 20 mJ

• dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

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• IRF3205 Power MOSFET