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  • IRF9630 P-Channel Power MOSFET

Product Images are shown for illustrative purposes only and may differ from actual product.

IRF9630 P-Channel Power MOSFET

  • Stock: 50
  • SKU: 0710 | DAA163
  • Rs. 86.26 (inc GST)
    Rs.73.10 + GST

    Qty :

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

IRF9630 P-Channel Power MOSFET

IRFP9630 is a 6.5 Ampere, 200 Volt, P-Channel Power MOSFET in TO-220 Package

IRFP9630 MOSFET is a P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. IRFP9630 power MOSFET is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

IRFP9630 P-channel Power MOSFET comes in TO220 Package. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRF9630 P-Channel Power MOSFET

  • 6.5A, 200V

  • rDS(ON) = 0.800Ω

  • Single Pulse Avalanche Energy Rated

  • SOA is Power Dissipation Limited

  • Nanosecond Switching Speeds

  • Linear Transfer Characteristics

  • High Input Impedance

  • Drain to Source Voltage VDS -200 V

  • Drain to Gate Voltage (RGS = 20kΩ) VDGR -200 V

  • Continuous Drain Current ID -6.5 A, TC = 100oC ID -4 A

  • Pulsed Drain Current IDM -26 A

  • Gate to Source Voltage VGS ±20 V

  • Maximum Power Dissipation PD 75 W

  • Dissipation Derating Factor 0.6 W/oC

  • Single Pulse Avalanche Energy Rating EAS 500 mJ

  • Operating and Storage Temperature TJ, TSTG -55 to 150 oC

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