IRFB4110PbF Power MOSFET

IRFB4110PbF N Channel Power MOSFET

IRFB4110 is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

Features of IRFB4110PbF Power MOSFET

• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

• Fully Characterized Capacitance and Avalanche SOA

• Enhanced body diode dV/dt and dI/dt Capability

• Lead Free

• RoHS Compliant, Halogen-Free

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  180 A

• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  130 A

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  120 A

• IDM Pulsed Drain Current 670 A

• PD @TC = 25°C Maximum Power Dissipation 370 W

• Linear Derating Factor 2.5 W/°C

• VGS Gate-to-Source Voltage -+20 V

• dv/dt Peak Diode Recovery 5.3 V/ns

Applications of IRFB4110PbF Power MOSFET

• High Efficiency Synchronous Rectification inc

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits

Related Links

• IRFB4110PbF Datasheet

Package Includes

• 1 x IRFB4110PbF N Channel Power MOSFET