IRFB4110PbF Power MOSFET

IRFB4110PbF Power MOSFET

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Features of IRFB4110PbF Power MOSFET

• Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

• Fully Characterized Capacitance and Avalanche SOA

• Enhanced body diode dV/dt and dI/dt Capability

• Lead Free

• RoHS Compliant, Halogen-Free

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  180 A

• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  130 A

• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V  120 A

• IDM Pulsed Drain Current 670 A

• PD @TC = 25°C Maximum Power Dissipation 370 W

• Linear Derating Factor 2.5 W/°C

• VGS Gate-to-Source Voltage -+20 V

• dv/dt Peak Diode Recovery 5.3 V/ns

Applications of IRFB4110PbF Power MOSFET

• High Efficiency Synchronous Rectification inc

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits