MJE13007 NPN Transistor

MJE13007 Switch-mode NPN Bipolar Power Transistor

The MJE13007 is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V switch−mode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.

Specifications Of MJE-13007 Switch-mode NPN Bipolar Power Transistor

• Product Category : Bipolar Transistors(BJT) 
  

• Collector- Emitter Voltage VCEO Max : 400 V 

• Collector- Base Voltage VCBO : 700 V 

• Emitter- Base Voltage VEBO : 9 V 

• Collector-Emitter Saturation Voltage : 1 V 

• Maximum DC Collector Current : 8 A 

• Gain Bandwidth Product fT : 14 MHz 

• Minimum Operating Temperature : - 65 C 

• Maximum Operating Temperature : + 150 C  

• Continuous Collector Current : 8 A  

• DC Collector/Base Gain hFE Min : 8  

• Pd - Power Dissipation : 80 W

• Mounting Style : Through Hole 

• Transistor Polarity : NPN 

• Configuration : Single 

• RoHS : No

Features Of MJE13007 Switch-mode NPN Bipolar Power Transistor

• SOA and Switching Applications Information

• Standard TO−220

• These Devices are Pb−Free and are RoHS Compliant

• Complementary to the MJE5850 through MJE5852 Series

Related Links

• MJE13007 Datasheet