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IRFB4110PbF N Channel Power MOSFET


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Availability: InStock priceValidUntil: 2026-03-14

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    Rs.116.58 Rs. 120.36 (inc GST)

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Delivery: 2–8 days across India. No MOQ required.

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IRFB4110PbF N Channel Power MOSFET

IRFB4110PbF N Channel MOSFET with low on-resistance, high efficiency, and 180A continuous drain current.

The IRFB4110PbF N Channel Power MOSFET is a next-generation electronic component designed for high voltage applications. It features advanced charge balance technology that minimizes conduction loss, ensuring low on-resistance and high efficiency in power conversion. With a continuous drain current of 180A at 25°C, this MOSFET excels in switching mode operations, making it ideal for applications requiring compact design and reliability.

Engineered for robustness, the IRFB4110PbF supports high-speed power switching and can withstand extreme dv/dt rates. This MOSFET is suitable for use in uninterruptible power supplies and hard-switched circuits. Its lead-free and RoHS-compliant nature ensures it meets environmental standards, making it a responsible choice for modern electronic designs.

For Indian customers, the IRFB4110PbF N Channel Power MOSFET is available at DNA Solutions, with options for local pickup in Nashik or delivery across India. Explore our extensive range of MOSFET & IGBT products for all your electronic needs.

Explore the extensive range of MOSFET & IGBT products at DNA Solutions. The IRFB4110PbF N Channel Power MOSFET offers advanced technology for efficient power management. Check other MOSFET & IGBT that we have in stock.

At DNA, we cater to all your electronic component needs. If you need specific parts or can’t find what you’re looking for, reach out to us. We also support imports for unavailable items and can assist with retail as well as bulk orders. Explore related components like DC to DC Converter Modules, Diodes, Analog ICs, Inductors, Microcontrollers, and Sensors. Contact Us.

Features of IRFB4110PbF N Channel Power MOSFET

  • Improved Gate Ruggedness
  • Enhanced body diode dV/dt capability
  • Fully characterized capacitance
  • Lead-free and RoHS compliant
  • High continuous drain current of 180A

Specification of IRFB4110PbF N Channel Power MOSFET

  • ID @ TC = 25°C Continuous Drain Current 180A
  • ID @ TC = 100°C Continuous Drain Current 130A
  • IDM Pulsed Drain Current 670A
  • PD @ TC = 25°C Maximum Power Dissipation 370W
  • VGS Gate-to-Source Voltage -+20V

Applications of IRFB4110PbF N Channel Power MOSFET

  • High Efficiency Synchronous Rectification
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched Circuits

Related Links for IRFB4110PbF N Channel Power MOSFET

    Package Includes

    • 1 X IRFB4110PbF N Channel Power MOSFET
    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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