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SI2336DS T1 GE3 SMD MOSFET


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  • Stock: 30

    Availability: InStock priceValidUntil: 2026-05-11

  • SKU: 3721 | DAF105

Availability: InStock priceValidUntil: 2026-05-11

  • Rs. 31.86 (inc GST)
    Rs.27.00 + GST

    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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SI2336DS T1 GE3 SMD Power MOSFET

SI2336DS T1 GE3 is a 30V N-channel MOSFET ideal for DC/DC converters with low Rds On of 42 mOhms and 5.2 A continuous drain current.

The SI2336DS T1 GE3 SMD Power MOSFET is a reliable N-channel device designed for efficient power management. With a breakdown voltage of 30V and a low on-resistance of 42 mOhms, this MOSFET operates effectively in DC/DC converters and boost converters. Its compact SOT-23-3 package allows for easy integration into various electronic circuits.

Engineered with TrenchFET technology, the SI2336DS T1 GE3 ensures fast switching with a typical turn-on delay time of just 6 ns and a turn-off delay time of 20 ns. This feature enhances performance in high-speed applications, making it a suitable choice for modern electronic designs. The device supports a wide temperature range, ensuring reliability in diverse operating conditions.

This MOSFET is ideal for applications that require efficient power conversion and management. Whether you're designing a new circuit or upgrading existing systems, the SI2336DS T1 GE3 SMD Power MOSFET stands out as a dependable component in the MOSFET & IGBT category.

Explore the best in MOSFET & IGBT solutions with DNA. We offer a wide range of products from top manufacturers. Check other MOSFET & IGBT that we have in stock.

If you need specific electronic components, reach out to DNA. We can help you find parts like DC to DC Converter IC, IGBT, Transistor, MOSFET, Microcontroller, or Analog IC. If it's not available, we can import it for you. Contact Us.

Features of SI2336DS T1 GE3 SMD Power MOSFET

  • N-Channel
  • 30V Drain-Source Voltage
  • Low On-Resistance of 42 mOhms
  • Fast Switching Times
  • SOT-23-3 Package

Specification of SI2336DS T1 GE3 SMD Power MOSFET

  • Vds: 30 V
  • Id: 5.2 A
  • Rds On: 42 mOhms
  • Vgs: -8 V to +8 V
  • Max Temp: +150 C
  • Power Dissipation: 1.8 W

Applications of SI2336DS T1 GE3 SMD Power MOSFET

  • DC/DC Converters
  • Boost Converters
  • Power Management Circuits
  • High-Speed Switching Applications

Package Includes

  • 1 X SI2336DS T1 GE3 SMD Power MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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