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SI2308BDS-T1-GE3- N-Channel 60-V (D-S) SOT-23 MOSFET


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  • Stock: 600

    Availability: InStock priceValidUntil: 2026-11-12

  • SKU: 3807 | DAG107

Availability: InStock priceValidUntil: 2026-11-12

  • Rs. 19.47 (inc GST)
    Rs.16.50 + GST

    Qty :

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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SI2308BDS-T1-GE3 N-Channel 60V MOSFET for Switching Applications

SI2308BDS-T1-GE3 N-Channel MOSFET with low RDS(on) and 60V rating for efficient load switching.

The SI2308BDS-T1-GE3 N-Channel 60V MOSFET is designed for fast switching applications in moderate to high-power circuits. Its low RDS(on) values minimize conduction losses, enhancing system efficiency. The small SOT-23 package makes it ideal for space-constrained designs, especially in Indian electronic projects. This MOSFET excels in DC-DC converters and load switching, ensuring reliable performance in power systems.

Utilizing advanced trench FET technology, the SI2308BDS-T1-GE3 operates efficiently with reduced gate charge. The enhancement mode feature keeps it normally off, suitable for low standby power needs. Applications include battery management systems, motor drivers, and power supply units, making it a versatile choice for various electronic applications.

Explore the potential of the SI2308BDS-T1-GE3 N-Channel 60V MOSFET for your projects. Its fast switching speed and compact design cater to the demanding needs of modern electronics in India, from LED drivers to consumer electronics. Enhance your designs with this reliable component.

Discover the efficiency of MOSFET & IGBT at DNA. Explore the SI2308BDS-T1-GE3 and other products in the MOSFET & IGBT category. Check other "MOSFET & IGBT" that we have in stock.

Are you looking for specific electronic components? DNA can help. We can import parts and support you in retail or bulk orders. Check out our offerings like HMI Displays, DC to DC Converter Modules, Microcontrollers, and more. Contact Us.

Features of SI2308BDS-T1-GE3 N-Channel 60V MOSFET

  • High Voltage Tolerance
  • Low On-Resistance (Rds(on))
  • Fast Switching Speed
  • Compact SOT-23 Package
  • Advanced Trench FET Technology
  • Enhancement Mode

Specification of SI2308BDS-T1-GE3 N-Channel 60V MOSFET

  • Vds Rating: 60V
  • Rds(on): Low
  • Package Type: SOT-23
  • Switching Speed: Fast
  • Technology: Trench FET

Applications of SI2308BDS-T1-GE3 N-Channel 60V MOSFET

  • DC-DC Converters
  • Load Switching
  • Battery Management Systems
  • Motor Drivers
  • Power Supply Units
  • LED Drivers

Related Links for SI2308BDS-T1-GE3 N-Channel 60V MOSFET for Switching Applications

Package Includes

  • 1 X SI2308BDS-T1-GE3 N-Channel 60V MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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