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STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
- Stock: 22 InStock
- SKU: 7375 | DAG205
-
Rs.
236.00 (inc GST)
Rs.200.00 + GSTQty :
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STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
The STW48N60M2 N-Channel device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The STW48N60M2 is a high-performance N-channel MOSFET from STMicroelectronics. It is designed for high-power switching applications and features low on-resistance and fast switching speeds. With a voltage rating of 600V and a current handling capability of 42A, it is ideal for use in applications such as power supplies, motor drives, and other power conversion systems.
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Features of STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
- High Voltage Rating (600V): Ensures safe operation in high-voltage power switching applications.
- Low R<sub>DS(on)</sub> (On-Resistance): Reduces conduction losses, improving system efficiency.
- High Current Handling (42A): Capable of delivering significant current in demanding power systems.
- Fast Switching: The MOSFET's fast switching speed minimizes switching losses, making it suitable for high-frequency applications.
- Low Gate Charge (Q<sub>g</sub>): Reduces power consumption in gate driving circuits, leading to lower overall power dissipation.
Specifications of STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
- Drain-Source Voltage (V<sub>DSS</sub>): 600V.
- Drain Current (I<sub>D</sub>): 42A at 25°C.
- On-Resistance (R<sub>DS(on)</sub>): 0.08Ω (typical).
- Gate Threshold Voltage (V<sub>GS(th)</sub>): 3.0V - 5.0V.
- Max Power Dissipation (P<sub>D</sub>): 417W.
- Gate Charge (Q<sub>g</sub>): 172nC (typical).
- Total Gate Charge (Q<sub>g</sub>): 172nC.
Package Includes
- 1 x STW48N60M2 N-Channel 600V 42A 3-Pin Power MOSFET
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