IRFZ48N Power MOSFET

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The IRFZ48N is TO-220AB package which universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

Features of IRFZ48N MOSFET

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Ultra Low On-Resistance

• Very Low Thermal Resistance

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

• Drain-Source Voltage VDS : 60V

• Gate-Source Voltage VGS : ± 20V

• Linear Derating Factor : 1.3 W/°C

• Single Pulse Avalanche Energy EAS : 100mJ

• Avalanche Current IAR : 50A

• Repetitive Avalanche Energy EAR : 19mJ

Related Link

• IRFZ48N Power MOSFET PDF