Infineon IR2101STRPBF High- and Low-Side Gate Driver

Infineon IR2101STRPBF High- and Low-Side Gate Driver

IR2101STRPBF dual-channel high- and low-side gate driver with 10 V to 20 V supplies and up to 600 V high-side offset.

Infineon IR2101STRPBF is a dual-channel high- and low-side gate driver for power MOSFETs and IGBTs. Its floating high-side channel supports a supply offset up to 600 V, while the gate-drive supplies operate from 10 V to 20 V. This suits switching stages that need separate high-side and low-side control.

The driver accepts 3.3 V, 5 V and 15 V logic inputs, so it can connect to common control circuits. Matched propagation delay helps keep both output channels aligned. Undervoltage lockout and tolerance to negative transients and dV/dt support stable gate control. A high-pulse-current buffer helps reduce cross-conduction in the driver.

Use this dual-channel gate driver to control an N-channel MOSFET or IGBT in a high-side configuration. The 600 V high-side offset and 10 V to 20 V gate-drive supply suit power conversion designs that need both output channels.

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Features of Infineon IR2101STRPBF High- and Low-Side Gate Driver

• Independent high-side and low-side output channels
• Floating high-side channel supports bootstrap operation
• Drives power MOSFETs and IGBTs
• Undervoltage lockout supports controlled gate operation
• Tolerant to negative transients and dV/dt
• High-pulse-current buffer helps reduce driver cross-conduction

Specifications of Infineon IR2101STRPBF High- and Low-Side Gate Driver

• Low-side and logic supply voltage (VCC): 10 V to 20 V
• Floating supply voltage (VBS): 10 V to 20 V
• High-side supply offset voltage: Up to 600 V, with logic operation for VS from -5 V to +600 V
• Logic input compatibility: 3.3 V, 5 V and 15 V logic
• Turn-on propagation delay: 160 ns typical, 220 ns maximum at VBIAS 15 V, CL 1000 pF, TA 25°C and VS 0 V
• Turn-off propagation delay: 150 ns typical, 220 ns maximum at VBIAS 15 V, CL 1000 pF, TA 25°C and VS 600 V
• Package: 8-lead SOIC
• Ambient operating temperature: -40°C to +125°C

Applications of Infineon IR2101STRPBF High- and Low-Side Gate Driver

• Driving an N-channel power MOSFET or IGBT in a high-side configuration

Related Links for Infineon IR2101STRPBF High- and Low-Side Gate Driver

• Infineon IR2101STRPBF High- and Low-Side Gate Driver Datasheet

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X Infineon IR2101STRPBF High- and Low-Side Gate Driver