IRFP4668 N-Channel Power MOSFET

IRFP4668 N-Channel Power MOSFET

IRFP4668 N-Channel MOSFET for high-performance switching, 200V, 130A, 9.7 mOhms Rds On.

The IRFP4668 N-Channel Power MOSFET is designed for high-performance switching applications, featuring a robust 200V drain-source breakdown voltage and a continuous drain current rating of 130A. This MOSFET ensures reliability with improved gate, avalanche, and dynamic dV/dt characteristics. Its enhanced body diode capabilities make it suitable for demanding electronic environments.

Engineered for efficiency, the IRFP4668 boasts a low Rds On of just 9.7 mOhms, optimizing power loss and thermal performance. The gate-source voltage range of -30V to +30V enhances its versatility in various applications. This product is ideal for power management, motor control, and other electronic circuits requiring dependable switching.

Explore the advantages of the IRFP4668 N-Channel Power MOSFET in your projects. With features like fully characterized capacitance and avalanche SOA, it meets the rigorous demands of modern electronic designs. Choose this MOSFET for your next design project to ensure high efficiency and reliability.

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Features of IRFP4668 N-Channel Power MOSFET

• N-channel configuration
• 200V drain-source voltage
• 130A continuous current
• 9.7 mOhms Rds On
• Improved avalanche characteristics

Specification of IRFP4668 N-Channel Power MOSFET

• Vgs – Gate-Source Voltage: -30V to +30V
• Vgs th – Gate-Source Threshold Voltage: 1.8V
• Qg – Gate Charge: 161 nC

Applications of IRFP4668 N-Channel Power MOSFET

• Power management
• Motor control
• High-performance switching
• Electronic circuits
• Power supply designs

Package Includes

• 1 X IRFP4668 N-Channel Power MOSFET