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IRFP4668 N-Channel Power MOSFET
- Stock: Out Of Stock
- SKU: 10481 | DAD337
-
Rs. 145.14 (inc GST)
Rs.123.00 + GSTQty :
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IRFP4668 N-Channel Power MOSFET
IRFP4668 N-Channel MOSFET for high-performance switching, 200V, 130A, 9.7 mOhms Rds On.
The IRFP4668 N-Channel Power MOSFET is designed for high-performance switching applications, featuring a robust 200V drain-source breakdown voltage and a continuous drain current rating of 130A. This MOSFET ensures reliability with improved gate, avalanche, and dynamic dV/dt characteristics. Its enhanced body diode capabilities make it suitable for demanding electronic environments.
Engineered for efficiency, the IRFP4668 boasts a low Rds On of just 9.7 mOhms, optimizing power loss and thermal performance. The gate-source voltage range of -30V to +30V enhances its versatility in various applications. This product is ideal for power management, motor control, and other electronic circuits requiring dependable switching.
Explore the advantages of the IRFP4668 N-Channel Power MOSFET in your projects. With features like fully characterized capacitance and avalanche SOA, it meets the rigorous demands of modern electronic designs. Choose this MOSFET for your next design project to ensure high efficiency and reliability.
Discover the reliability of the Infineon brand in the MOSFET & IGBT category at DNA. Explore our selection of high-performance components. Check other "MOSFET & IGBT" that we have in stock.
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Features of IRFP4668 N-Channel Power MOSFET
- N-channel configuration
- 200V drain-source voltage
- 130A continuous current
- 9.7 mOhms Rds On
- Improved avalanche characteristics
Specification of IRFP4668 N-Channel Power MOSFET
- Vgs – Gate-Source Voltage: -30V to +30V
- Vgs th – Gate-Source Threshold Voltage: 1.8V
- Qg – Gate Charge: 161 nC
Applications of IRFP4668 N-Channel Power MOSFET
- Power management
- Motor control
- High-performance switching
- Electronic circuits
- Power supply designs
Package Includes
- 1 X IRFP4668 N-Channel Power MOSFET
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