IRF630 N Channel Power MOSFET

IRF630 N-Channel Power MOSFET - 200 Volts, 9 Ampere in TO-220 Package; Doingter Make

IRF630 Power MOSFET from Doingter is a third generation Power MOSFETs that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220AB package of IRF630 N-Channel Power MOSFET is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 Watt. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry

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Features of IRF630 Power MOSFET

• Part Number: IRF630
• MAKE: Doingter
• Dynamic dv/dt Rating
• Advanced Process Technology
• Ultra Low ON-Resistance
• 175°C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9 Ampere
• ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.7 Ampere
• IDM Pulsed Drain Current 36 Ampere
• PD @TC = 25°C Power Dissipation 74 Watt
• Linear Derating Factor 0.59 W/°C
• VGS Gate-to-Source Voltage ± 20 V

Package Includes

1 x IRF630 N-Channel Power MOSFET