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IRF630 N-Channel MOSFET (Doingter)

  • Stock: 100

    Availability: InStock priceValidUntil: 2026-02-28

  • Brand: Doingter
  • SKU: 2852 | DAE534

Availability: InStock priceValidUntil: 2026-02-28

  • Rs. 24.07 (inc GST)
    Rs.20.40 + GST

    Qty :

  • Quantity Pricing (inc GST)

    10 + 24.07 25 + 22.18 50 + 20.41

GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Doingter IRF630 N Channel Power MOSFET

IRF630 N-Channel MOSFET, 200V, 9A, TO-220 Package for efficient power management.

The Doingter IRF630 N Channel Power MOSFET is designed for high-performance applications. It features a voltage rating of 200 volts and a continuous drain current of 9 amperes. This MOSFET offers low on-resistance and fast switching capabilities, making it suitable for various commercial and industrial uses. Its TO-220 package allows for efficient heat dissipation, handling up to 50 watts of power. With a wide operating temperature range up to 175°C, the Doingter IRF630 N Channel Power MOSFET ensures reliability in demanding conditions. This device is ideal for power supply circuits, motor control, and other electronic applications requiring robust performance.

Explore the range of MOSFET & IGBT at DNA Solutions. The Doingter brand offers reliable performance for your electronic needs. Check other MOSFET & IGBT that we have in stock.

At DNA, we understand the needs of Indian electronics buyers. If you can’t find certain parts, reach out to us. We can import components if needed and support both retail and bulk orders. Explore related items like DC to DC Converter Modules, Connectors, Inductors, Capacitors, and more. Contact Us.

Features of Doingter IRF630 N Channel Power MOSFET

  • Dynamic dv/dt Rating
  • Advanced Process Technology
  • Ultra Low ON-Resistance
  • Fast Switching
  • Ease of Paralleling

Specification of Doingter IRF630 N Channel Power MOSFET

  • ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9 Ampere
  • ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.7 Ampere
  • IDM Pulsed Drain Current 36 Ampere
  • PD @TC = 25°C Power Dissipation 74 Watt
  • VGS Gate-to-Source Voltage ± 20 V

Applications of Doingter IRF630 N Channel Power MOSFET

  • Power supply circuits
  • Motor control applications
  • Switching regulators
  • Amplifiers
  • Industrial automation

Package Includes

  • 1 X Doingter IRF630 N Channel Power MOSFET
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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