2SK3564 N-Channel Power MOSFET for Switching Applications

2SK3564 N-Channel Power MOSFET for Switching Applications

2SK3564: N-Channel MOSFET with 900V rating, 3A current, and 4.3Ω RDS(on) for efficient power switching.

The 2SK3564 N-Channel Power MOSFET is designed for high-voltage power switching applications. With a drain-source voltage rating of 900V and a continuous drain current of 3A, it efficiently handles demanding tasks in switch-mode power supplies and inverter circuits. This MOSFET features a low RDS(on) value of 4.3Ω and offers fast switching performance, ensuring minimal power losses and high efficiency in compact designs. The TO-220 package enhances thermal management, making it suitable for various applications.

Engineered for reliability, the 2SK3564 is ideal for lighting ballast control and consumer power systems. Its robust design ensures optimal performance in medium-current switching environments. For those in need of dependable MOSFET solutions, the 2SK3564 stands out with its fast response and durability, supporting efficient energy conversion. Discover how this component can elevate your electronic projects.

As a trusted supplier in India, DNA provides a range of MOSFETs and power transistors. The 2SK3564 N-Channel Power MOSFET is available for both retail and bulk purchases, ensuring you have access to high-quality components for your electronic needs. Explore the potential of the 2SK3564 in your next project.

Explore the reliability of the 2SK3564 N-Channel Power MOSFET from DNA. This essential component is perfect for your MOSFET & IGBT needs. Check other "MOSFET & IGBT" that we have in stock.

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Features of 2SK3564 N-Channel Power MOSFET

• N-Channel enhancement-mode power MOSFET
• High drain-source voltage of 900V
• Continuous drain current of 3A
• Low RDS(on) value of 4.3Ω
• Fast switching performance
• TO-220 package for effective thermal management

Specification of 2SK3564 N-Channel Power MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (VDSS): 900V
• Continuous Drain Current (ID): 3A
• Drain-Source On-Resistance (RDS(on)): 4.3Ω
• Gate Threshold Voltage (VGS(th)): 2.5 – 4.0V
• Total Power Dissipation (PD): 40W
• Total Gate Charge (Qg): 15nC
• Package: TO-220

Applications of 2SK3564 N-Channel Power MOSFET

• Switch-mode power supplies (SMPS)
• Lighting ballast control
• Inverter and converter circuits
• Consumer and industrial power systems
• High-voltage, medium-current switching

Related Links for 2SK3564 N-Channel Power MOSFET for Switching Applications

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X 2SK3564 N-Channel Power MOSFET (TO-220)