2SK3564 N-Channel Power MOSFET TO-220 Package

2SK3564: High Voltage N-Channel MOSFET for Power Switching Applications

The 2SK3564 MOSFET is a high-voltage N-Channel enhancement-mode power MOSFET designed for efficient and reliable power switching. It features a drain-source voltage rating of 900 V and a continuous drain current of 3 A, making it suitable for switch-mode power supplies, inverter circuits, and lighting ballasts. With a low R_DS(on) value of 4.3 Ω and fast switching performance, the 2SK3564 ensures reduced power losses and high efficiency in compact power circuits. The TO-220 package provides excellent thermal performance for demanding applications.

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Features of 2SK3564 MOSFET

• N-Channel enhancement-mode power MOSFET
• High drain-source voltage of 900 V
• Continuous drain current of 3 A
• Low R_DS(on) value of 4.3 Ω (typical)
• Fast switching performance for efficient power conversion
• TO-220 package for effective thermal management
• Ideal for SMPS, lighting ballast, and inverter circuits

Specifications of 2SK3564 MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 900 V
• Continuous Drain Current (I_D): 3 A
• Drain-Source On-Resistance (R_DS(on)): 4.3 Ω (typical)
• Gate Threshold Voltage (V_GS(th)): 2.5 – 4.0 V
• Total Power Dissipation (P_D): 40 W
• Total Gate Charge (Q_g): 15 nC (typical)
• Package: TO-220

Applications of 2SK3564 MOSFET

• Switch-mode power supplies (SMPS)
• Lighting ballast control
• Inverter and converter circuits
• Consumer and industrial power systems
• High-voltage, medium-current switching

Related Links

• 2SK3564 Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 x 2SK3564 N-Channel Power MOSFET (TO-220)