P55NF06 N Channel Power MOSFET

P55NF06 N Channel MOSFET, 50A, 60V, low resistance for efficient switching.

The P55NF06 N Channel Power MOSFET is designed for high-efficiency applications with a current capacity of 50 Amperes and a breakdown voltage of 60 Volts. This device features low on-state resistance of 14 mOhms, making it ideal for electronic ballast and low power switching applications. It operates efficiently in telecom and computer systems, ensuring reliable performance with minimal gate charge requirements.

Engineered for versatility, the P55NF06 N Channel Power MOSFET supports a wide temperature range from -55°C to +175°C. Its fast switching speed, with rise and fall times of 100 ns and 20 ns respectively, enhances performance in various high-speed applications. The TO-220 package ensures easy mounting and integration into your designs.

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Features of P55NF06 N Channel Power MOSFET

• N-Channel
• 50A continuous drain current
• 60V breakdown voltage
• Low on-state resistance of 14 mOhms
• Fast switching speed
• Wide temperature range from -55°C to +175°C
• TO-220 package

Specification of P55NF06 N Channel Power MOSFET

• Id: 55 A
• Vds: 60 V
• Rds On: 14 mOhms
• Vgs: 16 V
• Pd: 95 W
• Fall Time: 20 ns
• Rise Time: 100 ns

Applications of P55NF06 N Channel Power MOSFET

• Electronic ballast
• Low power switching
• Telecom applications
• Computer power supplies
• High-efficiency DC-DC converters

Related Links for P55NF06 N Channel Power MOSFET

P55NF06 N Channel Power MOSFET Datasheet: [Link to Datasheet]

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X P55NF06 N Channel Power MOSFET