MT4C4001JDJ 6 1 MEG x 4 DRAM 5V, EDO PAGE Mode, Optional Self Refresh IC

MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

MT4C4001JDJ 6 1 MEG x 4 DRAM with 5V operation, EDO page mode, and optional self-refresh.

The MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC is designed for high-performance applications, including computing and embedded systems. It features a 1 Meg x 4 configuration, providing efficient operation with fast access times. The EDO page mode allows for multiple data accesses per row address, significantly reducing latency during sequential reads or writes. Its optional self-refresh capability makes it ideal for power-sensitive applications.

Engineered with a standard operating voltage of 5V, the MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC supports a maximum access time of 60 ns. This component simplifies refresh operations with CAS-before-RAS refresh technology. It is packaged in a 24-pin plastic SOJ package, ensuring compatibility with various systems.

Applications of the MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC include early computer systems, embedded systems, industrial control systems, consumer electronics, and networking equipment. This versatility makes it a reliable choice for a wide range of electronic projects.

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Features of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

• Density: 4 Megabits organized as 1M x 4
• Voltage: Operates at 5V ±10%
• Access Time: Maximum speed of 60 ns
• EDO page mode for faster data transfers
• Optional self-refresh for power efficiency
• CAS-before-RAS refresh technology
• 24-pin plastic SOJ package.

Specification of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

• Memory Type: Dynamic Random-Access Memory (DRAM)
• Memory Size: 4 Megabits
• Access Time: 60 ns
• Package Type: 28-pin DIP
• Supply Voltage: 5V ± 10% (4.5V to 5.5V).

Applications of MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC

• Early computer systems
• Embedded systems
• Industrial control systems
• Consumer electronics
• Networking equipment.

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Package Includes

• 1 X MT4C4001JDJ 6 1 MEG x 4 DRAM Memory IC