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BC857 PNP SMD Transistor

Write a review | 2 reviews

Stock: 100
Availability: InStock priceValidUntil: 2026-06-28
SKU: 964 | DAB623

Rs. 3.30 (inc GST)
Rs.2.80 + GST

Qty :
Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

This product has a minimum quantity of 5

Description

BC857 PNP Transistor

BC857 is PNP transistor in a SOT23 plastic package. NPN complement of BC847.

Features of BC857

Low current (max. 100 mA)
Low voltage (max. 65 V)
V_EBOemitter-base voltage open collector : −5 V
I_Ccollector current (DC) : −100 mA
I_CM peak collector current : −200 mA
I_BM peak base current : −200 mA
P_tot total power dissipation, Tamb ≤ 25 °C : − 250 mW
T_stgstorage temperature : −65 to +150 °C
T_j junction temperature : 150 °C
T_amb operating ambient temperature : −65 to +150 °C

Application of BC857

General purpose switching and amplification.

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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Yes we provide GST Bill by the name of DNA Solutions. You will receive a GST compliant invoice for your records. You can take GST benefit.

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BC857 PNP SMD Transistor

Qty :

BC857 PNP Transistor

BC857 is PNP transistor in a SOT23 plastic package. NPN complement of BC847.

Features of BC857

Low current (max. 100 mA)

Low voltage (max. 65 V)

VEBO emitter-base voltage open collector : −5 V

IC collector current (DC) : −100 mA

ICM peak collector current : −200 mA

IBM peak base current : −200 mA

Ptot total power dissipation, Tamb ≤ 25 °C : − 250 mW

Tstg storage temperature : −65 to +150 °C

Tj junction temperature : 150 °C

Tamb operating ambient temperature : −65 to +150 °C

Application of BC857

General purpose switching and amplification.

Write a review

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V_EBOemitter-base voltage open collector : −5 V

I_Ccollector current (DC) : −100 mA

I_CM peak collector current : −200 mA

I_BM peak base current : −200 mA

P_tot total power dissipation, Tamb ≤ 25 °C : − 250 mW

T_stgstorage temperature : −65 to +150 °C

T_j junction temperature : 150 °C

T_amb operating ambient temperature : −65 to +150 °C