• IDW30C65D2XKSA1 Small Signal Switching DIODE

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IDW30C65D2XKSA1 Small Signal Switching DIODE

  • Stock: Out Of Stock

    Availability: NotInStock priceValidUntil: 2025-12-17

  • SKU: 7298 | DAH186

Availability: NotInStock priceValidUntil: 2025-12-17

  • Rs. 198.24 (inc GST)
    Rs.168.00 + GST

    Qty :

GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

IDW30C65D2XKSA1 Small Signal Switching DIODE

IDW30C65D2XKSA1 Small Signal Switching DIODE

The IDW30C65D2XKSA1 is a small signal switching diode integrated with an Insulated Gate Bipolar Transistor (IGBT). This component is designed for high-speed switching applications and is optimized for performance in circuits requiring low power consumption and fast switching times. The combination of diode and IGBT functionality in a single package makes it versatile for a variety of electronic applications.

DNA solutions, Nashik has various types of Diode 's. Check out our complete collection of  Diode's.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IDW30C65D2XKSA1 Small Signal Switching DIODE 

  • High-Speed Switching: Optimized for rapid switching, reducing power loss and enhancing overall circuit efficiency.
  • Low Forward Voltage Drop: The diode portion has a low forward voltage, which minimizes power dissipation during operation.
  • Integrated IGBT: The IGBT provides efficient switching capabilities, handling high voltages and currents with minimal losses.
  • Qualified according to JEDEC for target applications
  • 650V Emitter Controlled technology
  • Fast recovery
  • Soft switching
  • Low reverse recovery charge
  • Low forward voltage and stable over temperature
  • 175°C junction operating temperature

Specifications of IDW30C65D2XKSA1 Small Signal Switching DIODE 

  • Diode Forward Voltage (V<sub>F</sub>): 1.2V (typical)
  • Diode Reverse Recovery Time (t<sub>rr</sub>): 30ns
  • IGBT Collector-Emitter Voltage (V<sub>CE</sub>): 650V
  • IGBT Continuous Collector Current (I<sub>C</sub>): 30A

    Package Includes

    • 1 x IDW30C65D2XKSA1 Small Signal Switching DIODE

    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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