IDW30C65D2XKSA1 Small Signal Switching DIODE

IDW30C65D2XKSA1 Small Signal Switching Diode

IDW30C65D2XKSA1 diode for high-speed switching with low forward voltage drop and integrated IGBT functionality.

The IDW30C65D2XKSA1 Small Signal Switching Diode is ideal for high-speed switching applications. It features a low forward voltage drop, which reduces power loss and enhances circuit efficiency. The integrated Insulated Gate Bipolar Transistor (IGBT) allows for efficient handling of high voltages and currents. This makes the IDW30C65D2XKSA1 versatile for various electronic projects.

With a typical forward voltage of 1.2V and a reverse recovery time of just 30ns, this diode supports fast switching needs while maintaining stability over a wide temperature range. The IDW30C65D2XKSA1 is qualified according to JEDEC for target applications, ensuring reliability in demanding environments.

Whether you are designing circuits or upgrading existing systems, the IDW30C65D2XKSA1 provides the performance needed for modern electronics. Explore its potential in applications that require low power consumption and rapid switching.

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Features of IDW30C65D2XKSA1 Small Signal Switching Diode

• High-Speed Switching
• Low Forward Voltage Drop
• Integrated IGBT
• 650V Emitter Controlled Technology
• Fast Recovery

Specification of IDW30C65D2XKSA1 Small Signal Switching Diode

• Diode Forward Voltage (V_F): 1.2V (typical)
• Diode Reverse Recovery Time (t_rr): 30ns
• IGBT Collector-Emitter Voltage (V_CE): 650V
• IGBT Continuous Collector Current (I_C): 30A

Applications of IDW30C65D2XKSA1 Small Signal Switching Diode

• High-Speed Switching Circuits
• Power Management Systems
• Signal Processing
• Low Power Consumption Applications

Package Includes

• 1 X IDW30C65D2XKSA1 Small Signal Switching Diode