IRF630 Power MOSFET
- Product Code: 569
- Availability: 11
Price :Rs.35.40 (inc GST)
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IRF630 is a third generation N Channel Power MOSFETs that provides designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
Features of IRF630N MOSFET
Extremely high dv/dt capability
Very low intrinsic capacitances
Gate charge minimized
VDS Drain-source voltage (VGS = 0) 200 V
VDGR Drain-gate voltage (RGS = 20 kΩ) 200 V
VGS Gate-source voltage ± 20 V
ID Drain current (continuous) at TC = 25°C 9A
ID Drain current (continuous) at TC=100°C 5.7A
PTOT Total dissipation at TC = 25°C 75W