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IGP15N60T Low Loss IGBT

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Stock: Out Of Stock
Availability: NotInStock priceValidUntil: 2026-09-26
SKU: 642 |

Rs. 295.00 (inc GST)
Rs.250.00 + GST

Qty :
Qty Qty

GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

Description

IGP15N60T Low Loss IGBT

IGP15N60Tis a low loss IGBT from Infineon having TRENCHSTOP & FIELDSTOP technology which makes them suitable for applications of upto 600volts.

NOTE: The Markingcode on the IGBT is G15T60

Features of IGP15N60T Low Loss IGBT

Very low V_CE(sat)1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5us
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
Very tight parameter distribution
High ruggedness, temperature stable behavior
Very high switching speed
Positive temperature coefficient in V_CE(sat)
Low EMI
Pb-free lead plating; RoHS compliant
Collector-emitter voltage, T_j ≥ 25^oC V_CE 600 V
Pulsed collector current, tp limited by T_jmax I_Cpuls45A
Turn off safe operating area, V_CE= 600V, Tj = 175oC, tp = 1µs 45A
Gate-emitter voltage V_GE +-20 V
Power dissipation T_C = 25oC P_tot 130W
Operating junction temperature T_j-40 to +175^oC
Storage temperature T_s t_g -55 to +150^oC

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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IGP15N60T Low Loss IGBT

Qty :

IGP15N60T Low Loss IGBT

NOTE: The Markingcode on the IGBT is G15T60

Features of IGP15N60T Low Loss IGBT

Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5us

Designed for :

Frequency Converters

Uninterrupted Power Supply

Very tight parameter distribution

High ruggedness, temperature stable behavior

Very high switching speed

Positive temperature coefficient in VCE(sat)

Low EMI

Pb-free lead plating; RoHS compliant

Collector-emitter voltage, Tj ≥ 25oC VCE 600 V

Pulsed collector current, tp limited by Tjmax ICpuls 45A

Turn off safe operating area, VCE = 600V, Tj = 175oC, tp = 1µs 45A

Gate-emitter voltage VGE +-20 V

Power dissipation TC = 25oC Ptot 130W

Operating junction temperature Tj -40 to +175 oC

Storage temperature Ts tg -55 to +150 oC

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Very low V_CE(sat)1.5V (typ.)

Positive temperature coefficient in V_CE(sat)

Collector-emitter voltage, T_j ≥ 25^oC V_CE 600 V

Pulsed collector current, tp limited by T_jmax I_Cpuls45A

Turn off safe operating area, V_CE= 600V, Tj = 175oC, tp = 1µs 45A

Gate-emitter voltage V_GE +-20 V

Power dissipation T_C = 25oC P_tot 130W

Operating junction temperature T_j-40 to +175^oC

Storage temperature T_s t_g -55 to +150^oC