IRF1104PBF N-Channel 40v MOSFET

IRF1104PBF N-Channel MOSFET for Power Management

IRF1104PBF N-Channel MOSFET, 40V, low on-resistance, high current capacity.

The IRF1104PBF N-Channel MOSFET is designed for high-efficiency power management and conversion. This component operates at a drain-source voltage of 40V and features low on-resistance, which enhances efficiency and reduces power loss. Its high current handling capability makes it ideal for applications like DC-DC converters and motor control systems. The IRF1104PBF MOSFET also boasts fast switching speeds, which improves performance in high-frequency applications.

With a robust design, the IRF1104PBF N-Channel MOSFET can withstand high levels of power dissipation and thermal stress, making it a reliable choice for demanding environments. It is packaged in TO-220AB, ensuring compatibility with various mounting and heat dissipation solutions. The environmentally friendly P b-Free construction complies with RoHS standards, making it suitable for modern electronic applications.

Explore the capabilities of the IRF1104PBF in your power supply designs and enhance your projects' efficiency. This versatile MOSFET is a must-have for engineers and hobbyists alike, looking to optimize their electronic components for better performance.

Discover the advanced range of MOSFET & IGBT products at DNA. Explore the IRF1104PBF N-Channel MOSFET and enhance your power management solutions. Check other MOSFET & IGBT that we have in stock.

If you are searching for specific electronic components, reach out to us. We can import parts not available in our stock. We support both retail and bulk orders. Explore related items like Sensor Modules, Analog ICs, Diodes, LCDs, Crystals, and Hongfa Relays. Contact Us.

Features of IRF1104PBF N-Channel MOSFET

• Low On-Resistance
• High Current Capacity
• Fast Switching Speed
• Robust Design
• P b-Free
• Standard Package: TO-220AB

Specification of IRF1104PBF N-Channel MOSFET

• Type: N-Channel MOSFET
• Drain-Source Voltage (V DSS): 40V
• Gate-Source Voltage (V GS): ±20V
• Power Dissipation (P D): 250W
• Thermal Resistance, Junction-to-Case (R θJC): 0.5°C/W
• Operating Temperature Range: -55°C to +175°C
• Package: TO-220AB

Applications of IRF1104PBF N-Channel MOSFET

• DC-DC converters
• Power supplies
• Motor control
• High-frequency applications
• Power management systems

Related Links for IRF1104PBF N-Channel MOSFET for Power Management

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X IRF1104PBF MOSFET