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  • STP105N3LL Power MOSFET

Product Images are shown for illustrative purposes only and may differ from actual product.

STP105N3LL Power MOSFET

  • Rs. 41.54 (inc GST)
    Rs.35.20 + GST

    Qty :

  • Quantity Pricing (inc GST)

    5 + 38.23 15 + 35.16 50 + 32.33

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

STP105N3LL Power MOSFET

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
This is an N-channel Power MOSFET developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. 

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.


If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of STP105N3LL MOSFET

  • RDS(on) Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate drive power losses
  • VDS Drain-source voltage 30 V
  • VGS Gate-source voltage ± 20 V 
  • ID Continuous drain current at TC = 25 °C(silicon limited) 150 A
  • ID Continuous drain current at TC = 100 °C(silicon limited) 105 A
  • ID Continuous drain current at TC = 25 °C(package limited) 80 A
  • IDM Pulsed drain current 320 A
  • PTOT Total dissipation at TC = 25 °C 140 W
  • Derating factor 0.9 W/°C
  • EAS Starting Tj= 25°C, IAV = 40 A
  • Single pulse avalanche energy 150 mJ
  • Tstg Storage temperature -55 to 175 °C
  • Tj Max. operating junction temperature 175 °C

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Tags: Power MOSFET