STP105N3LL Power MOSFET

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

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Features of STP105N3LL MOSFET

• RDS(on) Qg industry benchmark

• Extremely low on-resistance RDS(on)

• High avalanche ruggedness

• Low gate drive power losses

• VDS Drain-source voltage 30 V

• VGS Gate-source voltage ± 20 V 

• ID Continuous drain current at TC = 25 °C(silicon limited) 150 A

• ID Continuous drain current at TC = 100 °C(silicon limited) 105 A

• ID Continuous drain current at TC = 25 °C(package limited) 80 A

• IDM Pulsed drain current 320 A

• PTOT Total dissipation at TC = 25 °C 140 W

• Derating factor 0.9 W/°C

• EAS Starting Tj= 25°C, IAV = 40 A

• Single pulse avalanche energy 150 mJ

• Tstg Storage temperature -55 to 175 °C

• Tj Max. operating junction temperature 175 °C

Related Documents

• STP105N3LL Datasheet