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  • STP105N3LL Power MOSFET

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STP105N3LL Power MOSFET

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    Rs.38.94 (inc GST)

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STP105N3LL Power MOSFET

This is an N-channel Power MOSFET developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.


Features of STP105N3LL MOSFET

  • RDS(on) Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate drive power losses
  • VDS Drain-source voltage 30 V
  • VGS Gate-source voltage ± 20 V 
  • ID Continuous drain current at TC = 25 °C(silicon limited) 150 A
  • ID Continuous drain current at TC = 100 °C(silicon limited) 105 A
  • ID Continuous drain current at TC = 25 °C(package limited) 80 A
  • IDM Pulsed drain current 320 A
  • PTOT Total dissipation at TC = 25 °C 140 W
  • Derating factor 0.9 W/°C
  • EAS Starting Tj= 25°C, IAV = 40 A
  • Single pulse avalanche energy 150 mJ
  • Tstg Storage temperature -55 to 175 °C
  • Tj Max. operating junction temperature 175 °C


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Tags: Power MOSFET