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2N60 MOSFET

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Stock: 6

SKU: 1433 | DAA286

Rs. 47.20 (inc GST)
Rs.40.00 + GST

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10 + 42.48

20 + 38.94

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Description

2N60 MOSFET

2N60 2 Ampere 600Volts N-Channel POWER MOSFET

The 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

FEATURES of 2N60 POWER MOSFET

RDS(ON) = 3.8Ω at VGS = 10V.
Ultra Low gate charge (typical 9.0nC)
Low reverse transfer capacitance (Crss = typical 5.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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Product Images are shown for illustrative purposes only and may differ from actual product.

2N60 MOSFET

Share :

Qty :

Quantity Pricing (inc GST)

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

2N60 MOSFET

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

FEATURES of 2N60 POWER MOSFET

RDS(ON) = 3.8Ω at VGS = 10V.Ultra Low gate charge (typical 9.0nC)Low reverse transfer capacitance (Crss = typical 5.0 pF)Fast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness

Write a review

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RDS(ON) = 3.8Ω at VGS = 10V.
Ultra Low gate charge (typical 9.0nC)
Low reverse transfer capacitance (Crss = typical 5.0 pF)
Fast switching capability
Avalanche energy specified
Improved dv/dt capability, high ruggedness