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IRFB260N Power MOSFET
- Stock: 3
- SKU: 1155 | DAA179
-
Rs.
152.22 (inc GST)
Rs.129.00 + GSTQty :
GST Invoice on all Purchase. So you will be eligible to take input tax credit. |
IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com. |
| Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location. |
IRFB260N Power MOSFET
IRFB260N Power MOSFET
Features of IRFB260N
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design.
- Fully Characterized Avalanche Voltage and Current
- Continuous Drain Current ID @ TC = 25°C VGS @ 10V 56
- Continuous Drain Current ID @ TC = 100°C VGS @ 10V 40 A
- IDM Pulsed Drain Current 220
- Power Dissipation PD @TC = 25°C 380 W
- Linear Derating Factor 2.5 W/°C
- VGS Gate-to-Source Voltage ± 20 V
- Peak Diode Recovery dv/dt 10 V/ns
- TJ Operating Junction and -55 to + 175 oC
- TSTG Storage Temperature Range -55 to + 175 oC
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design.
- Fully Characterized Avalanche Voltage and Current
- Continuous Drain Current ID @ TC = 25°C VGS @ 10V 56
- Continuous Drain Current ID @ TC = 100°C VGS @ 10V 40 A
- IDM Pulsed Drain Current 220
- Power Dissipation PD @TC = 25°C 380 W
- Linear Derating Factor 2.5 W/°C
- VGS Gate-to-Source Voltage ± 20 V
- Peak Diode Recovery dv/dt 10 V/ns
- TJ Operating Junction and -55 to + 175 oC
- TSTG Storage Temperature Range -55 to + 175 oC
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Tags: Power MOSFET