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IRFB260N Power MOSFET
- Stock: 44
- SKU: 1155 | DAA179
-
Rs. 152.22 (inc GST)
Rs.129.00 + GSTQty :
GST Invoice: Available for all purchases; eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
IRFB260N Power MOSFET by DNA Solutions
IRFB260N Power MOSFET, Low Gate-to-Drain Charge, 380W Power Dissipation, Continuous Drain Current 56A.
The IRFB260N Power MOSFET by DNA Solutions is designed for efficient switching applications. It features a low gate-to-drain charge, which minimizes switching losses, making it ideal for power management systems. This MOSFET can handle a continuous drain current of 56A at 25°C and offers a maximum power dissipation of 380W. Its fully characterized avalanche voltage and current ensure reliable performance in various conditions.
Engineered for versatility, the IRFB260N Power MOSFET operates within a wide temperature range from -55°C to +175°C. It simplifies design with fully characterized capacitance, including effective COSS. Applications include power supplies, motor drives, and various industrial electronic circuits.
Choose the IRFB260N Power MOSFET for your next project and experience enhanced performance and reliability. For those in Nashik, visit our local shop or order online to have this essential component delivered anywhere in India.
Explore the world of MOSFET & IGBT with DNA Solutions. Our IRFB260N Power MOSFET is a reliable choice for your electronic needs. Check other MOSFET & IGBT that we have in stock.
At DNA Solutions, we cater to all your electronic component needs. If you can't find specific parts, reach out to us. We can import your required items and support both retail and bulk orders. Explore related components like Microcontrollers, SMPS, LCDs, Sensors, and Power Supplies. Contact Us.
Features of IRFB260N Power MOSFET
- Low Gate-to-Drain Charge
- Fully Characterized Capacitance
- Continuous Drain Current 56A
- Maximum Power Dissipation 380W
- Wide Operating Temperature Range -55°C to +175°C
Specification of IRFB260N Power MOSFET
- Continuous Drain Current ID @ TC = 25°C VGS @ 10V 56A
- Continuous Drain Current ID @ TC = 100°C VGS @ 10V 40A
- IDM Pulsed Drain Current 220A
- Power Dissipation PD @ TC = 25°C 380W
- VGS Gate-to-Source Voltage ± 20V
- Peak Diode Recovery dv/dt 10V/ns
Applications of IRFB260N Power MOSFET
- Power management systems
- Motor drives
- Industrial electronic circuits
- Switching power supplies
Related Links for IRFB260N Power MOSFET by DNA Solutions
Package Includes
- 1 X IRFB260N Power MOSFET
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