IRFB260N Power MOSFET

IRFB260N Power MOSFET

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Features of IRFB260N

• Low Gate-to-Drain Charge to Reduce Switching Losses

• Fully Characterized Capacitance Including Effective COSS to Simplify Design.

• Fully Characterized Avalanche Voltage and Current

• Continuous Drain Current ID @ TC = 25°C VGS @ 10V 56

• Continuous Drain Current ID @ TC = 100°C VGS @ 10V 40 A

• IDM Pulsed Drain Current 220

• Power Dissipation PD @TC = 25°C 380 W

• Linear Derating Factor 2.5 W/°C

• VGS Gate-to-Source Voltage ± 20 V

• Peak Diode Recovery dv/dt 10 V/ns

• TJ Operating Junction and -55 to + 175 oC

• TSTG Storage Temperature Range -55 to + 175 oC

Related Link:

• IRFB260N SMPS Power MOSFET Datasheet.