IRG4PC50UD IGBT Insulated Gate Bipolar Transistor

IRG4PC50UD IGBT with ultrafast diode, optimized for high frequencies, and co-packaged with HEXFRED™ diodes.

The IRG4PC50UD IGBT Insulated Gate Bipolar Transistor is designed for high efficiency and superior performance in electronic applications. It operates effectively at frequencies ranging from 8 to 40kHz in hard switching modes and exceeds 200kHz in resonant modes. This fourth-generation IGBT features tighter parameter distribution, ensuring better performance compared to earlier models. The co-packaged HEXFRED™ diodes offer minimized recovery characteristics, reducing the need for snubbing, enhancing overall system efficiency.

Ideal for applications in alternative energy, power management, and maintenance & repair, the IRG4PC50UD IGBT provides reliable operation in demanding environments. Its design caters to high-frequency applications, making it a preferred choice for engineers and developers seeking robust solutions. Explore the potential of the IRG4PC50UD IGBT for your next project.

For those looking to enhance their systems, the IRG4PC50UD IGBT integrates seamlessly with various electronic components, ensuring optimal performance and longevity. Upgrade your designs with this advanced IGBT today.

Explore the world of efficient MOSFET & IGBT solutions at DNA. The IRG4PC50UD IGBT from an esteemed manufacturer offers high performance for your projects. Check other MOSFET & IGBT that we have in stock.

If you're searching for specific electronic components, DNA can assist you. We can import hard-to-find parts and support retail or bulk orders. Explore related items like resistors, DC to DC converter modules, transistors, and sensors. Contact Us.

Features of IRG4PC50UD IGBT Insulated Gate Bipolar Transistor

• Optimized for high frequencies
• Co-packaged with HEXFRED™ diodes
• Ultrafast soft recovery characteristics
• Enhanced efficiency
• Suitable for bridge configurations

Specification of IRG4PC50UD IGBT Insulated Gate Bipolar Transistor

• High frequency operation 8 to 40kHz
• Resonant mode operation >200kHz
• Insulated gate design
• Tighter parameter distribution
• Co-packaged with HEXFRED™ diodes

Applications of IRG4PC50UD IGBT Insulated Gate Bipolar Transistor

• Alternative energy systems
• Power management solutions
• Maintenance and repair applications
• High-frequency switching
• Bridge configurations

Package Includes

• 1 X IRG4PC50UD IGBT Insulated Gate Bipolar Transistor