MDF7N60B N‑Channel MOSFET TO‑220F Package

MDF7N60B: High‑Voltage N‑Channel MOSFET for Switching and Power Supply Applications

The MDF7N60B is a rugged N‑Channel MOSFET designed for high‑voltage switching in power supplies, LED drivers, and industrial electronics. It supports a drain‑source voltage of 600 V and a continuous drain current of 7 A. With low R_DS(on) (~1.4 Ω max) and high-speed switching capability, the MDF7N60B ensures efficient energy transfer and minimal thermal loss. Packaged in a TO‑220F fully isolated case, this MOSFET offers robust thermal performance for compact PCB designs.

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Features of MDF7N60B MOSFET

• N‑Channel enhancement mode power MOSFET
• High drain‑source voltage: 600 V
• Continuous drain current: 7 A
• Low on‑resistance R_DS(on): 1.4 Ω (max)
• Fast switching speed and low gate charge
• TO‑220F package with isolated tab for thermal efficiency

Specifications of MDF7N60B MOSFET

• Transistor Type: N‑Channel MOSFET
• Drain‑Source Voltage (V_DSS): 600 V
• Continuous Drain Current (I_D): 7 A
• R_DS(on)): 1.4 Ω max @ V_GS = 10 V
• Total Gate Charge (Q_g): ~27 nC
• Gate‑Source Voltage (V_GS): ±30 V
• Power Dissipation (P_D): ~40 W (T_C=25 °C)
• Package: TO‑220F

Applications of MDF7N60B MOSFET

• Switch mode power supplies (SMPS)
• LED drivers and lighting control
• Battery management and charging systems
• High‑voltage inverter circuits

Related Links

• MDF7N60B Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 × MDF7N60B N‑Channel MOSFET (TO‑220F)