2SK2624 N-Channel Power MOSFET for High-Voltage Switching

2SK2624: 600V N-Channel MOSFET with 3.5A current rating and low on-resistance for efficient power supply.

The 2SK2624 N-Channel Power MOSFET is designed for efficient high-voltage switching. With a drain-source voltage rating of 600V and a continuous drain current of 3.5A, it ensures reliable performance in various applications. Its low on-resistance minimizes energy loss, making it suitable for switch-mode power supplies and inverter stages. The insulated TO-220F package enhances safety during installation.

This MOSFET provides ultra-fast switching capabilities with a rise time of approximately 17ns. The low total gate charge of around 15nC further contributes to its efficiency. Ideal for general-purpose high-voltage switching, the 2SK2624 meets the needs of modern electronic designs while supporting robust performance.

Available at DNA, the trusted supplier of electronic components in India, the 2SK2624 N-Channel Power MOSFET is perfect for engineers and hobbyists looking for quality and reliability. Explore how this component can enhance your projects today.

Explore the range of reliable MOSFET & IGBT products at DNA. The 2SK2624 from a reputable manufacturer offers excellent performance in high-voltage applications. Check other MOSFET & IGBT that we have in stock.

If you are an Indian electronics buyer and cannot find specific components, reach out to us. We can import parts if they are unavailable and support both retail and bulk purchases. Explore related items like sensors, development modules, super capacitors, inductors, Nextion displays, and DC to DC converter ICs. Contact Us.

Features of 2SK2624 N-Channel Power MOSFET

• N-Channel silicon power MOSFET
• High drain-source voltage: 600V
• Continuous drain current: 3.5A
• Low RDS(on): 2.0Ω
• Low total gate charge: ~15nC
• Ultra-fast switching: tr ≈ 17ns
• Insulated TO-220F package

Specification of 2SK2624 N-Channel Power MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (VDSS): 600V
• Gate-Source Voltage (VGSS): ±30V
• Continuous Drain Current (ID): 3.5A
• On-Resistance (RDS(on)): 2.0Ω
• Total Gate Charge (Qg): 15nC
• Power Dissipation (PD): 2.0W
• Package: TO-220F

Applications of 2SK2624 N-Channel Power MOSFET

• Switch-mode power supplies (SMPS)
• High-voltage driver stages
• General-purpose high-voltage switching

Related Links for 2SK2624 N-Channel Power MOSFET for High-Voltage Switching

• Other Products from MOSFET & IGBT Category

Package Includes

• 1 X 2SK2624 N-Channel Power MOSFET (TO-220F)