MMF300Y060DK1 IGBT MODULE

MMF300Y060DK1 IGBT MODULE

The MMF300Y060DK1 is an IGBT (Insulated Gate Bipolar Transistor) module designed for high-efficiency power conversion. It combines IGBT transistors and freewheeling diodes in a single package. The module is optimized for medium to high-power industrial applications and provides reliable operation under high voltage and current conditions.

DNA solutions, Nashik has various types of IGBT. Check out our complete collection of IGBT.

• High Efficiency: Combines the benefits of IGBT technology with fast switching characteristics

• Low Conduction Loss: Minimizes power losses, ensuring energy efficiency.

• Compact Design: Offers a compact and robust package suitable for space-constrained applications

• High Reliability: Built with advanced thermal and electrical performance characteristics

• Built-in Diodes: Integrated freewheeling diodes for smooth operation in switching applications

• Easy Integration: Simplified assembly and maintenance due to modular design

Specifications of MMF300Y060DK1 IGBT MODULE

• Maximum Collector-Emitter Voltage (Vce): 600V

• Maximum Collector Current (Ic): 300A

• Gate-Emitter Voltage (Vge): ±20V (maximum rating)

• Switching Frequency: Suitable for medium to high frequencies

• Isolation Voltage: High dielectric strength for enhanced safety

• Thermal Resistance (Junction to Case): Optimized for efficient heat dissipation

• Operating Temperature Range: Typically -40°C to +150°C

Applications of MMF300Y060DK1 IGBT MODULE

• Industrial Motor Drives

• Renewable Energy Systems

• Power Conversion Systems

• UPS Systems

• Electric Vehicles (EVs)

• HVAC Systems

Package Includes

      1 x MMF300Y060DK1 IGBT MODULE