STF5NK100Z N-Channel Power MOSFET TO-220FP Package

STF5NK100Z: 1000V N-Channel SuperMESH3™ MOSFET for High-Efficiency Power Switching

The STF5NK100Z MOSFET is an N-Channel 1000 V SuperMESH3™ power MOSFET engineered for high-efficiency, high-voltage switching applications. With a drain-source voltage of 1000 V, a continuous drain current of 3.5 A, and low on-resistance of 2.7 Ω, the STF5NK100Z ensures minimal conduction losses and robust avalanche performance. Housed in an insulated TO-220FP package, it provides excellent thermal performance and electrical insulation for compact, reliable designs.

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Features of STF5NK100Z MOSFET

• N-Channel SuperMESH3™ power MOSFET
• High drain-source voltage: 1000 V
• Continuous drain current: 3.5 A (T_c=25 °C)
• Low R_DS(on): 2.7 Ω max (V_GS=10 V, I_D=1.75 A)
• Excellent avalanche ruggedness
• Low gate charge for fast switching
• Insulated TO-220FP package for safety and compact design

Specifications of STF5NK100Z MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 1000 V
• Gate-Source Voltage (V_GS): ±30 V
• Continuous Drain Current (I_D): 3.5 A (T_c=25 °C)
• Pulsed Drain Current (I_D(pulse)): 14 A
• On-Resistance (R_DS(on)): 2.7 Ω max
• Total Gate Charge (Q_g): 38 nC (typ.)
• Input Capacitance (C_iss): 910 pF
• Reverse Recovery Time (t_rr): 430 ns
• Power Dissipation (P_D): 45 W
• Operating Junction Temperature (T_j): 150 °C
• Package: TO-220FP

Applications of STF5NK100Z MOSFET

• Switch-mode power supplies (SMPS)
• Lighting ballasts
• High-voltage converter and inverter circuits
• Industrial power control

Related Links

• STF5NK100Z Datasheet (PDF)
• Browse More MOSFETs & IGBTs

Package Include

• 1 x STF5NK100Z N-Channel Power MOSFET (TO-220FP)