STP90NF03 Power MOSFET

This application specific Power MOSFET is the third generation of STMicroelectronics unique “Single Feature Size strip-based process.

The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.

DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

Features of STP90NF03 MOSFET

• Optimal RDS(on) x Qg trade-off

• Conduction losses reduced

• Switching losses reduced

• VDS Drain-source voltage (VGS= 0)30V

• VGS Gate-source voltage± 20V

• ID Drain current (continuous) at TC= 25°C90A

• ID Drain current (continuous) at TC=100°C65AIDM

• Drain current (pulsed)360A

• PTOT Total dissipation at TC= 25°C150W 

• Derating factor 0.73 W/°C 

• TJ Operating junction temperature -65 to 175°C

• Tstg Storage temperature 175°C