TK6P60V N-Channel Power MOSFET TO-252 (DPAK) Package
- Stock: 25
- SKU: 9996 | DAI986
-
Rs. 103.25 (inc GST)
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TK6P60V N-Channel Power MOSFET for High-Efficiency Switching
TK6P60V: 600V N-Channel MOSFET with 6.2A current, low RDS(on) and fast switching for efficient power applications.
The TK6P60V N-Channel Power MOSFET is engineered for high-efficiency switching in power supplies, lighting ballasts, and industrial control circuits. With a drain-source voltage rating of 600V and continuous drain current of 6.2A, this MOSFET minimizes conduction losses thanks to its low RDS(on). The fast switching performance enhances power conversion efficiency, making it ideal for modern electronic applications.
This transistor operates effectively in various environments, handling up to 45W of power dissipation and featuring a robust TO-252 (DPAK) package for surface-mount assembly. Its high avalanche energy capability adds to its reliability in demanding applications. The TK6P60V N-Channel Power MOSFET stands out in the market for its compact design and excellent thermal performance, catering to the needs of Indian electronics manufacturers.
For engineers and designers, the TK6P60V offers versatility in high-voltage switching tasks, including switch-mode power supplies (SMPS) and inverter circuits. This MOSFET is a strong choice for anyone looking to enhance system performance while maintaining space efficiency in their designs.
Explore the reliability of MOSFET & IGBT from DNA. The TK6P60V N-Channel Power MOSFET is a trusted component in high-efficiency applications. Check other "MOSFET & IGBT" that we have in stock.
If you're searching for specific electronic components, DNA can assist. We can import items if they are not available and support both retail and bulk orders. We also offer related products like Microcontrollers, Programmers, IGBTs, Development Boards, Sensors, and Crystals. Contact Us
Features of TK6P60V N-Channel Power MOSFET
- High drain-source voltage of 600V
- Continuous drain current of 6.2A
- Low RDS(on) of 0.85Ω
- High avalanche energy capability
- Fast switching performance
Specification of TK6P60V N-Channel Power MOSFET
- Transistor Type: N-Channel MOSFET
- Drain-Source Voltage (VDSS): 600V
- Continuous Drain Current (ID): 6.2A
- On-Resistance (RDS(on)): 0.85Ω
- Total Gate Charge (Qg): 33nC
- Input Capacitance (Ciss): 980pF
- Power Dissipation (PD): 45W
- Operating Junction Temperature (Tj): 150°C
- Package: TO-252 (DPAK)
Applications of TK6P60V N-Channel Power MOSFET
- Switch-mode power supplies
- Lighting ballasts
- Industrial motor drivers
- Inverter and converter circuits
- General high-voltage switching
Related Links for TK6P60V N-Channel Power MOSFET for High-Efficiency Switching
- TK6P60V Datasheet: Not Available
Package Includes
- 1 X TK6P60V N-Channel Power MOSFET (TO-252)
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