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1N60 Germanium Diode
- Stock: 9
- SKU: 1786 | DAA347
-
Rs.
9.44 (inc GST)
Rs.8.00 + GSTQty :
-
Quantity Pricing (inc GST)
5 + 8.85 10 + 8.26 20 + 7.67 50 + 7.08
GST Invoice on all Purchase. So you will be eligible to take input tax credit. |
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1N60 Germanium Diode
1N60 is a germanium diode with very low reverse current and ultra high switching characteristics.
Features Of 1N60 Germanium Diode
- Metal silicon junction, majority carrier conduction
- High current capability, Low forward voltage drop
- Extremely low reverse current lR
- Ultra speed switching characteristics
- Small temperature coefficient of forward characteristics
- Satisfactory Wave detection efficiency
- For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier
Mechanical Data
- Case : DO-35 glass case
- Polarity : Color band denotes cathode end
- Weight : Approx. 0.13 gram
Maximum Ratings Of 1N60 Germanium Diode
- Maximum Repetitive Peak Reverse Voltage (VRRM)50 v
- Maximum Average Forward Rectified Current (IF(AV)) 50mA
- Maximum Instantaneous Forward Voltage (VF) 1.0 v
- Maximum Reverse Leakage(VR) 20
- Typical Thermal Resistance, Juncion to Ambient (RthJA) 250
- Operating Temperature range (TJ) -55 to +70
- Storage Temperature Range (TSTG) -55 to +100
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