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2SK3566 N-Channel Power MOSFET for High Voltage Applications

  • Stock: 25

    Availability: InStock priceValidUntil: 2026-03-13

  • SKU: 9995 | DAI985

Availability: InStock priceValidUntil: 2026-03-13

  • Rs. 103.25 (inc GST)
    Rs.87.50 + GST

    Qty :

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2SK3566 N-Channel Power MOSFET for High Voltage Applications

2SK3566: N-Channel MOSFET with 900V rating, 2.5A continuous current, and 6.4Ω RDS(on) for efficient energy conversion.

The 2SK3566 N-Channel Power MOSFET is designed for high-voltage applications, offering a drain-source voltage of 900V and a continuous drain current of 2.5A. This MOSFET is ideal for switch-mode power supplies, lighting ballasts, and inverter circuits, ensuring efficient energy conversion. With a low RDS(on) of 6.4Ω, it minimizes power loss and enhances reliability in compact power systems.

Housed in a TO-220 package, the 2SK3566 provides excellent thermal management, making it suitable for demanding applications. Its fast switching capability supports effective control in consumer and industrial power systems. The 2SK3566 N-Channel Power MOSFET is a preferred choice for engineers looking for high performance and reliability in their designs.

For those seeking a dependable solution in high-voltage switching, the 2SK3566 stands out in the MOSFET & IGBT category. Trust DNA for your electronic component needs, ensuring prompt delivery across India.

Explore the reliability of MOSFET & IGBT products with DNA. The trusted supplier for high-quality electronic components like the 2SK3566. Check other MOSFET & IGBT that we have in stock.

At DNA, we cater to all your electronic component needs. If you cannot find specific parts, reach out to us. We can import hard-to-find items and support both retail and bulk orders. Explore related products like Programmers, Humidity & Temperature Sensors, and Development Modules. Contact Us.

Features of 2SK3566 N-Channel Power MOSFET

  • N-Channel enhancement-mode MOSFET
  • High drain-source voltage of 900V
  • Continuous drain current of 2.5A
  • Low RDS(on) value of 6.4Ω (typical)
  • Fast switching capability for efficient power conversion
  • TO-220 package for effective thermal management

Specification of 2SK3566 N-Channel Power MOSFET

  • Transistor Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 900V
  • Continuous Drain Current (ID): 2.5A
  • Drain-Source On-Resistance (RDS(on)): 6.4Ω (typical)
  • Gate Threshold Voltage (VGS(th)): 2.5 – 4.0V
  • Total Power Dissipation (PD): 30W
  • Gate Charge (Qg): 15 nC (typical)
  • Package: TO-220

Applications of 2SK3566 N-Channel Power MOSFET

  • Switch-mode power supplies (SMPS)
  • Lighting ballast control
  • Inverter and converter circuits
  • Consumer and industrial power systems
  • High-voltage, low-current switching

Related Links for 2SK3566 N-Channel Power MOSFET for High Voltage Applications

    Package Includes

    • 1 X 2SK3566 N-Channel Power MOSFET (TO-220)
    Extra Information
    Country of Origin China
    Imported By ElectroSource Private Limited

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