2SK3566 N-Channel Power MOSFET TO-220 Package

2SK3566: High Voltage N-Channel MOSFET for Power Supply and Lighting Circuits

The 2SK3566 is a high-voltage N-Channel enhancement-mode power MOSFET designed for fast switching and efficient energy conversion. It offers a drain-source voltage rating of 900 V and a continuous drain current of 2.5 A, making it ideal for use in switch-mode power supplies, lighting ballasts, and inverter applications. With a low R_DS(on) value of 6.4 Ω and fast switching performance, the 2SK3566 ensures minimal power loss and high reliability in compact power circuits. The device is housed in a TO-220 package, providing excellent heat dissipation.

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Features of 2SK3566 MOSFET

• N-Channel enhancement-mode power MOSFET
• High drain-source voltage of 900 V
• Continuous drain current of 2.5 A
• Low R_DS(on) value of 6.4 Ω (typical)
• Fast switching capability for efficient power conversion
• TO-220 package for effective thermal management
• Ideal for lighting ballasts, SMPS, and inverter circuits

Specifications of 2SK3566 MOSFET

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 900 V
• Continuous Drain Current (I_D): 2.5 A
• Drain-Source On-Resistance (R_DS(on)): 6.4 Ω (typical)
• Gate Threshold Voltage (V_GS(th)): 2.5 – 4.0 V
• Total Power Dissipation (P_D): 30 W
• Gate Charge (Q_g): 15 nC (typical)
• Package: TO-220

Applications of 2SK3566 MOSFET

• Switch-mode power supplies (SMPS)
• Lighting ballast control
• Inverter and converter circuits
• Consumer and industrial power systems
• High-voltage, low-current switching

Related Links

• 2SK3566 Datasheet (PDF)
• Browse More Transistors & Diodes

Package Include

• 1 x 2SK3566 N-Channel Power MOSFET (TO-220)