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BUZ350 Power MOSFET for General Applications
- Stock: 3
- SKU: 1215 | DAA404
-
Rs. 293.82 (inc GST)
Rs.249.00 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
Delivery: 2–8 days across India. No MOQ required.
Bulk Orders: Need more quantity or not in stock? Email: dnatechindia [at] gmail.com
Import Service: We import a wide range of electronic components on request.
BUZ350 Power MOSFET for General Applications
BUZ350 Power MOSFET, N-channel, 22A continuous current, 125W power dissipation.
The BUZ350 Power MOSFET for General Applications is an N-channel enhancement mode transistor designed for a variety of electronic applications. It supports a continuous drain current of 22A and a pulsed drain current of 88A, making it suitable for high-power tasks. With a power dissipation of 125W, this MOSFET operates efficiently in various environments, with temperature ratings from -55°C to +150°C.
This BUZ350 Power MOSFET features a gate-source voltage rating of ±20V and offers reliable avalanche performance with a maximum avalanche energy of 450mJ. Its thermal resistance ratings ensure effective heat management, enhancing its longevity and reliability. This makes it ideal for applications requiring robust power control.
Choose the BUZ350 Power MOSFET for your next project to ensure stable and efficient operation. Its wide range of applications includes power supplies, motor drivers, and switching regulators, catering to the needs of Indian electronics enthusiasts and engineers.
Explore the reliability of MOSFET & IGBT with DNA Solutions. We offer the BUZ350 from a trusted Manufacturer. Check other MOSFET & IGBT that we have in stock.
If you're seeking more electronic components, DNA can assist you. We offer everything from Inductors to Digital ICs. If you can't find a specific part, reach out to us. We can import items not in stock and support both retail and bulk orders. Contact Us
Features of BUZ350 Power MOSFET
- N-channel
- Enhancement mode
- Avalanche-rated
- Continuous drain current: 22A
- Pulsed drain current: 88A
- Power dissipation: 125W
- Operating temperature: -55°C to +150°C
Specification of BUZ350 Power MOSFET
- Max gate-source voltage: ±20V
- Thermal resistance, chip-case: ≤ 1 K/W
- Thermal resistance, chip to ambient: 75
- Avalanche energy: 450mJ
Applications of BUZ350 Power MOSFET
- Power supplies
- Motor drivers
- Switching regulators
- General electronic applications
Related Links for BUZ350 Power MOSFET for General Applications
Package Includes
- 1 X BUZ350 Power MOSFET
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