BUZ350 MOSFET

Buz350 is a Power MOS transistor transistor used for general applications.

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Features of BUZ350 MOSFET

• N channel

• Enhancement mode

• Avalanche-rated 

• Continuous drain current TC=33°C ID:22A

• Pulsed drain current TC = 25°C IDpuls:88

• Avalanche current, limited by Tjmax IAR 22

• Avalanche energy, periodic limited by Tjmax EAR 12 mJ

• Avalanche energy, single pulse

• ID = 22 A, VDD = 50 V, RGS = 25 Ω

• L = 1.39 mH, Tj=25 °C EAS 450

• Gate source voltage VGS : ± 20 V

• Power dissipation TC = 25°C Ptot: 125W

• Operating temperature Tj : -55 ... + 150 °C

• Storage temperature Tstg : -55 ... + 150

• Thermal resistance, chip case RthJC ≤ 1 K/W

• Thermal resistance, chip to ambient RthJA 75

• DIN humidity category, DIN 40 040 E

• IEC climatic category, DIN IEC 68-1 55 / 150 / 56