BSZ068N06NSATMA1 N-Channel Power MOSFET

BSZ068N06NSATMA1 N-Channel MOSFET with low on-resistance of 6.8 mΩ, supports 100 A current and 60 V voltage.

The BSZ068N06NSATMA1 N-Channel Power MOSFET is designed for high-current applications, offering a low on-resistance of only 6.8 mΩ to enhance efficiency. With a continuous drain current of up to 100 A and a maximum drain-source voltage of 60 V, this MOSFET is ideal for automotive systems, DC-DC converters, and motor drives. Its compact SuperSO8 package ensures excellent thermal performance, making it suitable for demanding environments.

Engineered for reliability, the BSZ068N06NSATMA1 supports fast switching with low gate charge, making it an excellent choice for synchronous rectification. This N-channel MOSFET is perfect for battery management systems and load control applications. With robust design features, it performs well in automotive and harsh environments.

Explore the benefits of the BSZ068N06NSATMA1 N-Channel Power MOSFET for your electronic projects. It is an essential component for efficient power management in various applications, ensuring reliability and high performance.

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Features of BSZ068N06NSATMA1 N-Channel Power MOSFET

• Ultra-low on-resistance (6.8 mΩ)
• High continuous drain current (100 A)
• Low gate charge for fast switching
• Excellent thermal performance
• Suitable for logic-level drive
• Robust design for automotive use

Specification of BSZ068N06NSATMA1 N-Channel Power MOSFET

• Product Category: MOSFETs
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Vgs - Gate-Source Voltage: -20 V, +20 V
• Rds On - Drain-Source Resistance: 8.2 mΩ

Applications of BSZ068N06NSATMA1 N-Channel Power MOSFET

• Automotive power switching
• DC-DC converters
• Synchronous rectification
• Motor drivers
• Battery management systems

Package Includes

• 1 X BSZ068N06NSATMA1 N-Channel Power MOSFET