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  • IRFB4110 N-Channel MOSFET (Doingter)

Product Images are shown for illustrative purposes only and may differ from actual product.

IRFB4110 N-Channel MOSFET (Doingter)

  • Stock: 2
  • Brand: Doingter
  • SKU: 2834 | DAE488
  • Rs. 100.30 (inc GST)
    Rs.85.00 + GST

    Qty :

  • Quantity Pricing (inc GST)

    10 + 92.28 25 + 84.84 50 + 78.12

GST Invoice on all Purchase. So you will be eligible to take input tax credit.

IF component not in Stock or require more quantity or want to buy in bulk e-mail us your requirements on: dnatechindia "at" gmail.com.

Shipping : Due to Covid-19 situation delivery will be affected. Delivery period due to covid-19 issue will be from 4 - 12 days depending upon your location.

IRFB4110 N-Channel Power MOSFET

IRFB4110 POWER MOSFET 180 Ampere, 100 Volts N-CHANNEL MOSFET, Doingter Make

IRFB4110 is new generation of high voltage MOSFET from Doingter and utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. IRFB4110 N-channel Power MOSFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

We deal in retail as well as in bulk quantity. For bulk quantity feel free to contact us. DNA Solutions has large collection of various types of MOSFET and IGBT's. Check our complete collection of MOSFET and IGBT.

If you are in Nashik you can buy this Electronic Component at our local shop at New CBS, Nashik or you can place order online and get it delivered at your doorstep anywhere in India.

Features of IRFB4110 MOSFET

  • Part No: IRFB4110 MOSFET
  • Make: Doingter
  • Industry standard through-hole power package
  • High-current rating
  • Product qualification according to JEDEC standard
  • Silicon optimized for applications switching below <100 kHz
  • Softer body-diode compared to previous silicon generation


Rating of IRFB4110 N-Channel MOSFET

  • Gate-Source Voltage: 20 Volts
  • Drain to Source Breakdown Voltage: 100 Volts
  • Continuous Drain Current: 180 Ampere
  • Pulsed Drain Current: 670 Ampere
  • Power Dissipation: 370 Watt

Benefits of IRFB4110 N-Channel MOSFET

  • Standard pinout allows for drop in replacement
  • High-current carrying capability package
  • Industry standard qualification level
  • High performance in low frequency applications
  • Increased power density
  • Provides designers flexibility in selecting the most optimal device for their application


Applications of IRFB4110 Power MOSFET

  • SMPS
  • UPS
  • Solar power inverter
  • DC motor drives
  • Battery powered applications


Package Includes

1 x IRFB4110 N-Channel MOSFET

Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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