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D45VH10G PNP Bipolar Junction Power Transistor

  • Stock: Out Of Stock

    Availability: NotInStock priceValidUntil: 2026-04-06

  • SKU: 8741 | DAI033

Availability: NotInStock priceValidUntil: 2026-04-06

  • Rs. 154.11 (inc GST)
    Rs.130.60 + GST

    Qty :

GST Invoice: Available for all purchases — eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

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Import Service: We import a wide range of electronic components on request.

D45VH10G PNP Bipolar Junction Power Transistor

D45VH10G PNP Transistor for power applications with 10A current, 80V voltage, and low saturation voltage.

The D45VH10G PNP Bipolar Junction Power Transistor is ideal for high-power applications like power amplifiers and motor control. It operates efficiently in the TO-220 package, which provides excellent thermal management. With a collector current of 10A and a collector-emitter voltage of 80V, this transistor ensures reliable performance in demanding environments. Its low saturation voltage minimizes power loss, enhancing overall efficiency.

Designed for versatility, the D45VH10G PNP Bipolar Junction Power Transistor is perfect for switching circuits and power supply regulation. It features a high DC current gain ranging from 30 to 100, making it suitable for various electronic applications. Its robust construction allows it to operate in a temperature range from -65°C to +150°C, ensuring durability and stability.

For those seeking a reliable solution for their electronic projects, the D45VH10G PNP Bipolar Junction Power Transistor stands out. Its applications include push-pull amplifiers and power supply regulation, making it a valuable component for any high-power electronic design.

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Features of D45VH10G PNP Bipolar Junction Power Transistor

  • High Collector Current (Ic): Supports up to 10A
  • High Voltage Capability: Collector-Emitter voltage (Vceo) of 80V
  • Low Saturation Voltage (Vce(sat)): Ensures efficient switching
  • High DC Current Gain (hFE): Up to 100
  • TO-220 Package: Excellent heat dissipation

Specification of D45VH10G PNP Bipolar Junction Power Transistor

  • Transistor Type: PNP
  • Collector-Emitter Voltage: 80V
  • Collector-Base Voltage: 80V
  • Emitter-Base Voltage: 5V
  • Collector Current: 10A
  • Power Dissipation: 60W
  • DC Current Gain: 30 - 100
  • Saturation Voltage: 2V
  • Operating Temperature Range: -65°C to +150°C
  • Package Type: TO-220

Applications of D45VH10G PNP Bipolar Junction Power Transistor

  • Power Amplifiers
  • Switching Circuits
  • Motor Control
  • Power Supply Regulation
  • Push-Pull Amplifiers

Related Links for D45VH10G PNP Bipolar Junction Power Transistor

Package Includes

  • 1 X D45VH10G PNP Bipolar Junction Power Transistor
Extra Information
Country of Origin China
Imported By ElectroSource Private Limited

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