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D45VH10G PNP Bipolar Junction Power Transistor
- Stock: Out Of Stock
- SKU: 8741 | DAI033
-
Rs. 154.11 (inc GST)
Rs.130.60 + GSTQty :
GST Invoice: Available for all purchases — eligible for input tax credit.
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D45VH10G PNP Bipolar Junction Power Transistor
D45VH10G PNP Bipolar Junction Power Transistor
D45VH10G is a PNP bipolar junction transistor (BJT) designed for high-power applications, including power switching, amplifier circuits, and motor control. It is housed in a TO-220 package, making it suitable for applications requiring efficient thermal management. This transistor offers high gain, low saturation voltage, and robust performance under high-current conditions.
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Features of D45VH10G PNP Bipolar Junction Power Transistor
- High Collector Current (Ic): Supports up to 10A, suitable for power applications
- High Voltage Capability: Collector-Emitter voltage (Vceo) of 80V, allowing operation in high-voltage circuits
- Low Saturation Voltage (Vce(sat)): Ensures efficient switching and minimal power loss
- High DC Current Gain (hFE): Provides amplification efficiency with values up to 100
- TO-220 Package: Offers excellent heat dissipation for high-power applications
Specifications of D45VH10G PNP Bipolar Junction Power Transistor
- Transistor Type: PNP
- Collector-Emitter Voltage : 80V
- Collector-Base Voltage: 80V
- Emitter-Base Voltage: 5V
- Collector Current: 10A
- Power Dissipation: 60W
- DC Current Gain: 30 - 100
- Saturation Voltage: 2V
- Operating Temperature Range: -65°C to +150°C
- Package Type: TO-220
Applications of D45VH10G PNP Bipolar Junction Power Transistor
- Power Amplifiers
- Switching Circuits
- Motor Control
- Power Supply Regulation
- Push-Pull Amplifiers
Package Includes
1 x D45VH10G PNP Bipolar Junction Power Transistor
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