D45VH10G PNP Bipolar Junction Power Transistor

D45VH10G PNP Bipolar Junction Power Transistor

D45VH10G is a PNP bipolar junction transistor (BJT) designed for high-power applications, including power switching, amplifier circuits, and motor control. It is housed in a TO-220 package, making it suitable for applications requiring efficient thermal management. This transistor offers high gain, low saturation voltage, and robust performance under high-current conditions.

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• High Collector Current (Ic): Supports up to 10A, suitable for power applications

• High Voltage Capability: Collector-Emitter voltage (Vceo) of 80V, allowing operation in high-voltage circuits

• Low Saturation Voltage (Vce(sat)): Ensures efficient switching and minimal power loss

• High DC Current Gain (hFE): Provides amplification efficiency with values up to 100

• TO-220 Package: Offers excellent heat dissipation for high-power applications

Specifications of D45VH10G PNP Bipolar Junction Power Transistor

• Transistor Type: PNP

• Collector-Emitter Voltage : 80V

• Collector-Base Voltage: 80V

• Emitter-Base Voltage: 5V

• Collector Current: 10A

• Power Dissipation: 60W

• DC Current Gain: 30 - 100

• Saturation Voltage: 2V

• Operating Temperature Range: -65°C to +150°C

• Package Type: TO-220

Applications of D45VH10G PNP Bipolar Junction Power Transistor

• Power Amplifiers

• Switching Circuits

• Motor Control

• Power Supply Regulation

• Push-Pull Amplifiers

Package Includes

      1 x D45VH10G PNP Bipolar Junction Power Transistor