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FCP190N60E N Channel Power MOSFET

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Stock: 10
Availability: InStock priceValidUntil: 2026-08-26
SKU: 3893 | DAG589

Rs. 454.30 (inc GST)
Rs.385.00 + GST

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GST Invoice: Available for all purchases; eligible for input tax credit.

Delivery: 2–8 days across India. No MOQ required.

Bulk Orders: Need a larger quantity or item not in stock? Email: dnatechindia [at] gmail.com

Import Service: We import a wide range of electronic components on request.

Description

FCP190N60E N Channel Power MOSFET - High Voltage Switching

FCP190N60E - N-channel MOSFET with 600V VDS, low RDS(on), and 190A current capacity.

The FCP190N60E N Channel Power MOSFET is a robust component designed for high-voltage applications. With a maximum drain-source voltage of 600V, it excels in energy-efficient power switching. Its low on-resistance ensures minimal conduction losses, making it ideal for applications requiring high current handling, typically around 190A. The fast switching capability of this MOSFET further enhances its performance in high-frequency environments.

Built using advanced silicon technology, the FCP190N60E N Channel Power MOSFET features low gate charge and excellent thermal performance. This ensures effective heat dissipation during operation, contributing to the overall reliability of the device. Suitable for demanding applications, this component is a vital addition to any power management system.

For Indian electronics buyers, the FCP190N60E N Channel Power MOSFET is readily available at our store in Nashik or online for convenient delivery across India. Explore our range of MOSFETs to find the perfect fit for your project.

Explore the reliability and efficiency of MOSFET & IGBT from DNA. The FCP190N60E N Channel Power MOSFET is perfect for your high-voltage applications. Check other "MOSFET & IGBT" that we have in stock.

At DNA, we cater to the needs of Indian electronics buyers. If you cannot find certain parts, we can import them for you. We support both retail and bulk orders. Explore related items like SMPS, Diode, Crystal, Inductor, HMI Display, and Nextion Display. Contact Us.

Features of FCP190N60E N Channel Power MOSFET

High Voltage Rating
Low On-Resistance
High Current Capability
Fast Switching
Thermal Performance
Rugged Construction

Specification of FCP190N60E N Channel Power MOSFET

Drain-Source Voltage (Vds): 600V
Continuous Drain Current (Id): 190A
Gate Threshold Voltage (VGS(TH)): 2.5V to 4.5V
On-Resistance (RDS(on)): Low
Gate Charge (QG): Low

Applications of FCP190N60E N Channel Power MOSFET

Power management systems
Energy-efficient devices
High-voltage power supply
Motor control applications
Switching power supplies

Package Includes

1 X FCP190N60E N Channel Power MOSFET

Extra Information
Country of Origin	China
Imported By	ElectroSource Private Limited

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