FCP190N60E N Channel Power MOSFET

FCP190N60E N Channel Power MOSFET

The 190N60E is a high-voltage N-channel MOSFET with a maximum drain-source voltage (VDS) of 600V. It is designed for high-efficiency power switching and energy-saving applications. The MOSFET is built using advanced silicon technology, offering low gate charge and low on-resistance, which enhances switching speed and reduces power loss.

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• High Voltage Rating: Drain-Source Voltage (VDS): 600V, making it suitable for high-voltage applications.

• Low On-Resistance: Very low RDS(on) ensures minimal conduction losses, leading to improved efficiency in power circuits.

• High Current Capability: Continuous Drain Current (Id): Capable of handling high currents, typically in the range of 190A.

• Fast Switching: Designed for fast switching, which is critical in high-frequency applications.

• Thermal Performance: Low thermal resistance to ensure better heat dissipation during operation.

• Rugged Construction: Built to handle rugged environments and is designed for high reliability in demanding applications.

Specifications of FCP190N60E N Channel Power MOSFET

• Drain-Source Voltage (Vds): 600V
  

• Continuous Drain Current (Id): Typically around 190A (specific to the package and cooling conditions).
  

• Gate Threshold Voltage (VGS(TH)): Typically 2.5V to 4.5V.
  

• On-Resistance (RDS(on)): Extremely low, typically in the milliohm range.
  

• Gate Charge (QG): Low gate charge for fast switching.
  

Package Includes

1 x FCP190N60E N Channel Power MOSFET